| PART |
Description |
Maker |
| TC58DVG02A1FT00 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TC55VBM316AFTN TC55VBM316AFTN40 TC55VBM316AFTN55 T |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58FVM6B2A TC58FVM6T2A TC58FVM6B2ATG-65 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TC58FVT160A TC58FVT160AFT TC58FVT160AFT-10 TC58FVT |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TC74ACT374 TC74ACT374P TC74ACT374F TC74ACT374FT TC |
OCTAL D-TYPE FLIP-FLOP WITH 3-STATE OUTPUT
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
|
Toshiba Semiconductor
|
| TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
TOSHIBA[Toshiba Semiconductor]
|
| TC51WHM516AXGN70 TC51WHM516AXGN65 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS, 2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| TPC8111 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
Toshiba Semiconductor
|
| TPCP8002 |
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV)
|
Toshiba Semiconductor
|
| TPCF8302 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
Toshiba Semiconductor
|
