Part Number Hot Search : 
167BZXI 1060CT NCP4543 1N4692 T2222 2SK387 LTC32 2A473
Product Description
Full Text Search

MTW33N10E - TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE From old datasheet system

MTW33N10E_62993.PDF Datasheet


 Full text search : TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE From old datasheet system


 Related Part Number
PART Description Maker
MTB9N25E MTB9N25E-D TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 9.0 AMPERES 250 VOLTS
ON Semiconductor
MOTOROLA[Motorola, Inc]
MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06 TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
ON Semiconductor
MOTOROLA[Motorola, Inc]
http://
MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
From old datasheet system
ON Semiconductor
Motorola, Inc.
MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 600 VOLTS
From old datasheet system
ON Semiconductor
MOTOROLA[Motorola, Inc]
MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422 From old datasheet system
TMOS POWER FET 3.0 AMPERES 600 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
MOTOROLA[Motorola, Inc]
ON Semiconductor
MTP3N120E_D ON2600 MTP3N120E-D TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
ON Semiconductor
MTB60N10E7T4 MTB60N10E7 TMOS POWER FET 60 AMPERES 100 VOLTS
ON Semi
MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate
From old datasheet system
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
ON Semiconductor
Motorola, Inc
MTB33N10E TMOS POWER FET 33 AMPERES 100 VOLTS 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
Motorola Mobility Holdings, Inc.
Motorola, Inc
MTV32N20E MTV32N20E_D ON2673 MTV32N20E-D TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
TMOS POWER FET 32 AMPERES 200 VOLTS RDS(ON) = 0.075 OHM
From old datasheet system
ON Semiconductor
ETC
Motorola, Inc
 
 Related keyword From Full Text Search System
MTW33N10E afe + homeplug av MTW33N10E transistor MTW33N10E module MTW33N10E interface MTW33N10E integrated circuit
MTW33N10E lead MTW33N10E pci endian mode MTW33N10E DATASHEET PDF MTW33N10E 制造商 MTW33N10E schottky
 

 

Price & Availability of MTW33N10E

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.44390511512756