PART |
Description |
Maker |
MTM12P10 MTP12P06 MTP12P10 |
POWER FIELD EFFECT TRANSISTOR 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB (MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
|
PSMN005-75P PSMN005-75B PSMN005_75P_75B-01 |
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB From old datasheet system N-channel enhancement mode field-effect transistor
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State GE Solid State
|
PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫 LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
MW6S010GMR1 MW6S010GNR1 MW6S010MR1 MW6S010 MW6S010 |
RF Power Field Effect Transistor
|
飞思卡尔半导体(中国)有限公司 FREESCALE[Freescale Semiconductor, Inc] Freescale (Motorola)
|
MRF1517NT1 |
RF Power Field Effect Transistor
|
FREESCALE[Freescale Semiconductor, Inc]
|
IRF830 |
Power Field Effect Transistor
|
ON Semiconductor
|
27271SL |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRFE6S9045NR1 CRCW12061001FKEA ATC100B470JT500XT 2 |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MTP2N80 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|