PART |
Description |
Maker |
27L256-12 27L256-20 27L256-25 27L256-15 |
256K-BIT [32Kx8] LOW VOLTAGE OPERATION CMOS EPROM 256K比特[32Kx8]低电压工作的CMOS存储
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Macronix International Co., Ltd.
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KM62256CL KM62256CLTGI-7L KM62256CLG-4 KM62256CLG- |
32Kx8 bit Low Power CMOS Static RAM 32Kx8 bit Low Power CMOS Static RAM 32Kx8位低功耗CMOS静态RAM
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Samsung Electronic SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd.
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KM62U256CLTG-10L KM62U256CLTG-8L KM62U256CLG-10L K |
32Kx8 bit Low Power & Low Vcc CMOS Static RAM 32Kx8 bit Low Power AND Low Vcc CMOS Static RAM
|
ETC SAMSUNG[Samsung semiconductor]
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MX27L256TC-20 MX27L256TI-20 MX27L256TI-25 MX27L256 |
256K-BIT [32Kx8] LOW VOLTAGE OPERATION CMOS EPROM
|
Macronix International Co., Ltd.
|
BR93L66RFVM-WTR CAT28C64BGI-12T CAT25C32Y14I CAT25 |
EEPROM SRL 256X16 BIT The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS EEPROM (4kx8) 32K 2.5-6.0 EEPROM (4kx8) 32K 1.8-6.0 EEPROM (1024x8) 8K EEPROM 256K X 8 200ns EEPROM I2C BUS; 4.5 to 5.5V 16Kbit; -40 to 85 C EEPROM (256x8) 2K 1.8-6.0 EEPROM (512x8) 4k 1.8-6.0 EEPROM 128K X 8 150ns EEPROM (8kx8) 64K 1.8-6.0 EEPROM (2048x8)(1024x16)16K EEPROM U 804-29EE0107CWH EEPROM 64K X 8 70ns EEPROM (256x8) 2K 2.5-6.0 EEPROM (8kx8) 64K 2.5-6.0 SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, SOIC SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, TSSOP EEPROM (384x8) 128k 16 EEPROM SPI 1KBIT EEPROM SPI 4096X8 BIT EEPROM SRL 64X16 BIT EEPROM (256x8) (128x16) 2K 8-Kb I<sup>2</sup>C CMOS Serial EEPROM, SOIC EEPROM (128x8) 1k 2.5-6.0 EEPROM (8kx8) 64K 5V 90ns EEPROM (32kx8) 256K 5V 150 EEPROM (32kx8) 256K 5V 120 EEPROM 2kb 1.7-5.5V Ind I2C EEPROM 512K-Bit CMOS PARA EEPROM EEPROM (32kx8) 256K 3V 250 EEPROM 64K X 8 512K 5V 150 EEPROM 256K (32KX8)
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Omron Electronics, LLC Atmel, Corp. MITSUMI ELECTRIC CO., LTD. Intersil, Corp. Cypress Semiconductor, Corp. TE Connectivity, Ltd. Silicon Storage Technology, Inc. BCD Semiconductor Manufacturing, Ltd. Belden, Inc. Rohm Co., Ltd. Bourns, Inc. NXP Semiconductors N.V. Lattice Semiconductor, Corp. Rectron Semiconductor SIEMENS AG Maxim Integrated Products, Inc. Rochester Electronics, LLC RF Solutions, Ltd. Fujitsu, Ltd.
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U634H256CSA35 |
NOVRAM|32KX8|CMOS|SOP|32PIN|PLASTIC NOVRAM | 32KX8 |的CMOS |专科| 32脚|塑料
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Electronic Theatre Controls, Inc.
|
BS62LV2563TC BS62LV2563TI BS62LV2563 BS62LV2563DC |
5V ECL Differential Receiver; Package: SOIC; No of Pins: 8; Container: Rail Very Low Power/Voltage CMOS SRAM 32K X 8 bit 非常低功电压CMOS SRAM32K的8 Very Low Power/Voltage CMOS SRAM 32K X 8 bit 非常低功电压CMOS SRAM2K的8
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Brilliance Semiconducto... BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
|
MB84256A-70P-SK MB84256A-10P-SK MB84256A-70PFTN MB |
CMOS 256K bit Low Power SRAM CMOS 256 KBit Low Power SRAM CMOS 256K-BIT LOW POWER SRAM
|
Fujitsu Component Limited.
|
GM71C17403C-6 GM71C17403C-7 GM71C17403CL-7 GM71S17 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns 4,194,304 WORDS X 4 BIT CMOS DYNAMIC RAM CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power
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Hynix Semiconductor
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K6T8016C3M-TB70 K6T8016C3M-TF70 K6T8016C3M-RB70 K6 |
512Kx16 bit Low Power CMOS Static RAM Data Sheet 512Kx16 bit Low Power CMOS Static RAM 512Kx16位低功耗CMOS静RAM
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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