PART |
Description |
Maker |
STW5NA100 5367 STH5NA100FI STH5NA100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTORS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS From old datasheet system N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式快速功率MOS晶体 N沟道增强模式功率MOS晶体管(不适用沟道增强模式快速功率马鞍山晶体管)
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ST Microelectronics SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] STMicroelectronics N.V.
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IRFZ40 IRFZ40FI 3019 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOSFET) N沟道增强模式功率MOS晶体管(不适用沟道增强模式功率MOSFET的) From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
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STH7NA100FI STW7NA100FI STW7NA100 5759 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN From old datasheet system N-CHANNEL MOSFET N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式功率MOS晶体 N沟道增强模式功率MOS晶体管(不适用沟道增强模式功率马鞍山晶体管
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 TE Connectivity, Ltd.
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APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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SD219 SD217DE SD217DR SD219DR SD217 SD217CHP SD219 |
25 V, 6 ohm, N-channel enhancement-mode D-MOS power FET (SD217 / SD219) N CHANNEL ENHANCEMENT MODE D MOS POWER FET
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List of Unclassifed Man... Topaz Semiconductor ETC[ETC]
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SD1106DD SD1106 SD1106AD SD1106CHP |
60 V, N-channel enhancement-mode D-MOS power FET N CHANNEL ENHANCEMENT MODE D MOS POWER FETS
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Topaz Semiconductor ETC[ETC]
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IRF520 IRF520FI 3002 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS From old datasheet system
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
APT6017B2FLL APT6017LFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 600V 35A 0.017 Ohm
|
Advanced Power Technology, Ltd.
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STH10NA50 STH10NA50FI STW10NA50 |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR N-CHANNEL Power MOS MOSFET
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
STU9NA60 |
N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式功率MOS晶体 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|
APT20M20JFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 200V 106A 0.020 Ohm
|
Advanced Power Technology Ltd.
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APT10035JLL |
POWER MOS 7 1000V 25A 0.350 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
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Advanced Power Technology Ltd.
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