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TC55VBM316AFTN - 524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TC55VBM316AFTN_56114.PDF Datasheet

Part No.

TC55VBM316AFTN TC55VBM316AFTN40 TC55VBM316AFTN55 TC55VBM316ASTN40 TC55VBM316ASTN55 TC55VBM316

Description

524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

File Size

212.13K / 15 Page

Maker

TOSHIBA[Toshiba Semiconductor]

JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: TC55VBM316AFTN55

Maker: Toshiba

Pack: ETC

Stock: Reserved

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Email: oulindz@gmail.com

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Homepage

http://www.semicon.toshiba.co.jp/eng/

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Full text search : 524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Product Description search : 524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

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