| PART |
Description |
Maker |
| MBR20045CTR |
High Power Schottky Rectifiers - Twin Tower Modules
|
America Semiconductor
|
| UPA831TC UPA831TC-T1 |
NPN SILICON EPITAXIAL TWIN TRANSISTOR
|
California Eastern Laboratories
California Eastern Labs
|
| UPA862TD-T3 UPA862TD-A UPA862TD-T3-A |
NPN Silicon RF Twin Transistor with 2 Different Elements
|
Renesas Electronics Corporation
|
| HTT1115EFTL-E HTT1115E |
Silicon NPN Epitaxial Twin Transistor
|
Renesas Electronics Corporation
|
| UPA839TF-T1 UPA839TF |
NPN SILICON EPITAXIAL TWIN TRANSISTOR
|
NEC[NEC]
|
| BGT24MR2 |
Silicon Germanium 24 GHz Twin IQ Receiver MMIC
|
Infineon Technologies A...
|
| UPA826TF UPA826TF-T1 |
NPN SILICON EPITAXIAL TWIN TRANSISTOR
From old datasheet system
|
NEC Corp.
NEC[NEC]
|
| 2SK1087 2SK1087-MR |
TV 99C 97#22D 2#8(TWIN) PN RE
N-CHANNEL SILICON POWER MOSFET
|
FUJI ELECTRIC CO LTD
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
http://
|
| MBR1070 MBR1090 MBR1080 MBR10100 MBR1060 MBR1060_D |
SWITCHMODEPower Rectifiers 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC
SWITCHMODE⒙ POWER RECTIFIERS
SWITCHMODE⑩ Power Rectifiers
SWITCHMODE Power Rectifiers
SCHOTTKY BARRIER RECTIFIER
SWITCHMODE??Power Rectifiers
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semi
MOTOROLA[Motorola Inc]
|
| M4A5 M1P5 M1P1 M2G9 M5D1 M5M1 M1F9 M1B5 M5B5 M7P9 |
MEDIUM CURRENT SILICON RECTIFIERS
(M2Kx) MEDIUM CURRENT SILICON RECTIFIERS
Header, Breakaway Vertical; Number of Contacts:2; Pitch Spacing:2.54mm; Number of Rows:1; Gender:Header; Series:42375; Body Material:PA Polyamide
KK 100 Hdr Assy Bkwy 30 Ckt Tin
MEDIUM CURRENT SILICON RECTIFIERS 中型电流硅整
|
List of Unclassifed Manufac...
EDAL
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
List of Unclassifed Man...
|
| BFS386L6 |
RF-Bipolar - NPN Silicon TWIN mixed type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz
|
Infineon
|
