| PART |
Description |
Maker |
| BUP304 Q67078-A4200-A2 |
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) 35 A, 1000 V, N-CHANNEL IGBT, TO-218
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BUP306D Q67040-A4222-A2 BUP306-D |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 23 A, 1200 V, N-CHANNEL IGBT, TO-218
From old datasheet system
IGBT Duopack (IGBT with Antiparallel ...
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| SGL60N90D |
IGBT CO-PAK (High Speed Switching Low Saturation Voltage High Input Impedance)
|
FAIRCHILD[Fairchild Semiconductor]
|
| C67078-A4404-A2 |
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BUP300 Q67078-A4203-A2 |
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| IXGP10N60A |
Low VCE(sat) IGBT, High speed IGBT 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| IXSM30N60A IXSH30N60 IXSH30N60A IXSM30N60 |
Low VCE(sat) IGBT, High Speed IGBT
|
IXYS[IXYS Corporation]
|
| IXGH10N60 IXGH10N60A IXGP10N60 IXGP10N60A IXGA10N6 |
Low VCE(sat) IGBT, High speed IGBT
|
IXYS[IXYS Corporation]
|
