| PART |
Description |
Maker |
| KDV350E |
VCO for UHF Band Radio
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
| KDV273UL |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND
|
KEC(Korea Electronics)
|
| EC2C03C |
Diffused Junction Type Silicon Diode Variable Capacitance Diode for UHF Band VCO
|
Sanyo Semicon Device
|
| HVL381CM |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVL381C |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVC368B |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVC362 |
Variable Capacitance Diode for VCO
|
Hitachi Semiconductor
|
| HVD355B |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVD358B |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVD355B |
Variable Capacitance Diode for VCO
|
Zhaoxingwei Electronics ., Ltd
|
