| PART |
Description |
Maker |
| K7M321835C-PC65 K7M321835C-PI65 K7M321835C-QC65 K7 |
1Mx36 & 2Mx18 Flow-Through NtRAM
|
Samsung semiconductor
|
| DSK7N163601A K7N163601 K7N163601A-QFCI13 K7N163601 |
1Mx36 & 2Mx18 Flow-Through NtRAM
512Kx36 & 1Mx18 Pipelined NtRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7R320982M K7R321882 K7R321882M K7R323682 K7R32368 |
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
1Mx36 & 2Mx18 QDRTM II b4 SRAM
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM 1Mx36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7D321874C K7D323674C |
1Mx36 & 2Mx18 SRAM
|
Samsung semiconductor
|
| K7R321884M K7R323684M K7R323684M-FC16 K7R321884M-F |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7S3236T4C-FECI33 K7S3218T4C-FECI33 K7S3236T4C-FEC |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
|
Samsung semiconductor
|
| K7J323682C K7J321882C |
1Mx36 & 2Mx18 DDR II SIO b2 SRAM
|
Samsung semiconductor
|
| K7K3236U2C K7K3218U2C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| IS61DDPB22M18A IS61DDPB22M18A/A1/A2 IS61DDPB21M36A |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| IS61DDP2B22M18A IS61DDP2B21M36A/A1/A2 IS61DDP2B22M |
2Mx18, 1Mx36 36Mb DDR-IIP (Burst 2) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| K7K3236U2C K7K3218U2C-EC330 K7K3218U2C-FC330 |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
DDR SRAM, PBGA165 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
|
Samsung semiconductor
Maxim Integrated Products, Inc.
|
