| PART |
Description |
Maker |
| APT11GF120BRDQ1 APT11GF120BRDQ1G |
FAST IGBT & FRED
Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3; IC (A): 11; 25 A, 1200 V, N-CHANNEL IGBT, TO-247AC
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| CM50DU-24H |
IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| CM50E3U-24H09 |
IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| CM15TF-12H |
IGBT Modules: 600V
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CM50DY-24H |
MEDIUM POWER SWITCHING USE INSULATED TYPE 中功率开关使用绝缘型
IGBT Modules:1200V
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| IXGT40N60B2 IXGH40N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
75 A, 600 V, N-CHANNEL IGBT, TO-268AA
HiPerFAST IGBT
|
IXYS Corporation
|
| CM15MD3-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| IXSH45N120B IXSH45B120B IXST45B120B |
High Voltage IGBT S Series - Improved SCSOA Capability
IGBT Discretes: Low Saturation Voltage Types
High Voltage IGBT(VCES200V，VCE(sat).0V的高电压绝缘栅双极晶体管) 75 A, 1200 V, N-CHANNEL IGBT, TO-247AD
1200V high voltage IGBT
|
IXYS Corporation
IXYS, Corp.
|
| IXGA15N120B IXGP15N120B |
HiPerFAST IGBT
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
|
http://
IXYS Corporation
|
