PART |
Description |
Maker |
2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132 |
Medium Power Transistor 中等功率晶体 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SC-62 From old datasheet system Medium Power Transistor (-32A,-1A) Transistors > Small Signal Bipolar Transistors(up to 0.6W) Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
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Rohm Co., Ltd. Rohm CO.,LTD. ROHM[Rohm]
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2SD1055 2SD1766 D1758 2SD1758 2SD1919 2SD1862 A580 |
Medium Power Transistor (32V, 2A) 2000 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR Medium Power Transistor 32V/ 2A Medium Power Transistor 32V, 2A Medium Power Transistor 32V 2A From old datasheet system
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ROHM[Rohm] Rohm CO.,LTD.
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LM317MDT LM317MS LM317MT LM317MX LM217M LM217MDT L |
MEDIUM CURRENT1.2 TO 37V ADJUSTABLE VOLTAGE REGULATORS MEDIUM CURRENT 1.2 TO 37V ADJUSTABLE VOLTAGE REGULATOR Medium Current 1.2 TO 37V Adjustable Volatage Regulator(中等电流.2V7V可调电压稳压 中等电流1.27V可调Volatage稳压器(中等电流,片山至1.2V的可调电压稳压器
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
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SF25JZ51 SF25GZ51 F25JZ51 |
SF25JZ51 THYRISTOR SILICON PLANAR TYPE MEDIUM POWER CONTROL APPLICATIONS MEDIUM POWER CONTROL APPLICATIONS 中功率控制中的应
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TOSHIBA[Toshiba Semiconductor]
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SBM52214X SBM52414Z SBM52214G SBM51214G SBM51214N |
Components and FTTx solutions - Tx 1310nm/Rx 1310nm, Medium Power Medium Power BIDI Optical Standard Module 1310 nm Emitting, 1310 nm Receiving Medium Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving Transceiver Medium Power BIDI Optical Standard Module 1310 nm Emitting/ 1310 nm Receiving 中功率比迪光学标准模1310纳米发光,纳米接1310
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INFINEON[Infineon Technologies AG]
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BCP54 BCP54-16 BCP56-10 BCP56-16 BCP55-10 BCP55-16 |
NPN medium power transistors TRANSISTOR MEDIUM POWER 晶体管中功率
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NXP Semiconductors PHILIPS[Philips Semiconductors] Microchip Technology, Inc.
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P-459-002 |
Medium Voltage Coexistance Filters & Splitter Box Medium Voltage Coexistence Filter & Splitter Box
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PREMO CORPORATION S.L
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CSA968A CSA968 CSA968B CSA968BO CSA968BY CSA968AY |
25.000W Medium Power PNP Plastic Leaded Transistor. 180V Vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238AO 25.000W Medium Power PNP Plastic Leaded Transistor. 180V Vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSC2238AY 25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSC2238BY 25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238BO 25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238B 25.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238 PNP PLASTIC POWER TRANSISTORS Single-Phase Filter; Filter Type:RFI; Current Rating:16A; Voltage Rating:250V; Capacitance:1uF; Inductance:0.6uH; Mounting Type:Flange; Series:FN2060; Terminal Type:Quick Connect RoHS Compliant: Yes
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Continental Device India Limited
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AT-42000 AT-42000-GP4 |
Up to 6 GHz Medium Power Up to 6 GHz Medium Power GHz中等功率高达6 GHz的中等功
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HIROSE ELECTRIC Co., Ltd. HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
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2SC3420 E000842 |
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS From old datasheet system
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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