| PART |
Description |
Maker |
| K7A801809B K7A803609B K7A803609B06 |
256Kx36 & 512Kx18 Synchronous SRAM
|
Samsung semiconductor
|
| K7N801845B |
256Kx36 & 512Kx18 Pipelined NtRAM
|
Samsung semiconductor
|
| KM736V887 |
256Kx36 & 512Kx18 Synchronous SRAM
|
Samsung semiconductor
|
| K7M801825M |
256Kx36 & 512Kx18 Flow-Through NtRAMData Sheet
|
Samsung Electronic
|
| K7N801809A |
512Kx18-Bit Pipelined NtRAMData Sheet
|
Samsung Electronic
|
| KM736V847 |
256Kx36-Bit Flow Through No Turnaround SRAM(256Kx36位数据流无返回静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| ISL76161 ISL76161AVZ ISL76161AVZ-T ISL76161AVZ-TK |
12-Bit, 3.3V, 130MSPS, High Speed D/A Converter; Temperature Range: -25°C to 85°C; Package: 28-TSSOP T&R PARALLEL, WORD INPUT LOADING, 12-BIT DAC, PDSO28
|
Intersil Corporation
Intersil, Corp.
|
| EDI2CG472128V10D2 EDI2CG472128V85D2 EDI2CG472128V- |
4x128Kx72, 3.3V Sync/Sync Burst SRAM(4x128Kx72, 3.3V0ns,同步/同步脉冲静态RAM模块) 4x128Kx723.3同步/同步突发静态存储器x128Kx723.3伏，10纳秒，同同步脉冲静态内存模块）
4x128Kx72, 3.3V Sync/Sync Burst SRAM(4x128Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块) 4x128Kx72.3同步/同步突发静态存储器x128Kx72.3伏，8.5ns，同同步脉冲静态内存模块）
4x128Kx72, 3.3V Sync/Sync Burst SRAM(4x128Kx72, 3.3V锛?.5ns,???/?????????RAM妯″?)
SSRAM Modules
|
Bourns, Inc.
Electronic Theatre Controls, Inc.
|
| HI586008 HI5860IA HI5860SOICEVAL1 HI5860IA-T |
12-Bit, 130 MSPS, High Speed D/A Converter; Temperature Range: -40°C to 85°C; Package: 28-TSSOP T&R PARALLEL, WORD INPUT LOADING, 0.035 us SETTLING TIME, 12-BIT DAC, PDSO28
12-Bit, 130MSPS, High Speed D/A Converter
|
Intersil, Corp.
Intersil Corporation
|
