| PART |
Description |
Maker |
| FQU5P20 FQD5P20 FQD5P20TM |
200V P-Channel QFET
200V P-Channel MOSFET 3.7 A, 200 V, 1.4 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRHNB8260 IRHNB3260 IRHNB4260 IRHNB7260 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) | SMT
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
|
IRF[International Rectifier]
|
| FQB34N20L FQI34N20L FQB34N20LTMSB82076 FQB34N20LTM |
200V LOGIC N-Channel MOSFET 31 A, 200 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
200V N-Channel Logic Level QFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRF9240 |
CAP CER 250VAC 100PF X7R 1808 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
-11A, -200V, 0.500 Ohm, P-Channel Power MOSFET
-11A -200V 0.500 Ohm P-Channel Power MOSFET
11A/ -200V/ 0.500 Ohm/ P-Channel Power MOSFET
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IXTL15N20 IXTL8P40 IXTL5N65 IXTL5P40 IXTL6N60 IXTM |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 8A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 5A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-204AC
TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 24A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-218VAR
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 6A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-254 晶体管| MOSFET的| P通道| 200伏五（巴西）直| 10A条（丁）|254
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 5A I(D) | TO-254 晶体管| MOSFET的| N沟道|650V五（巴西）直| 5A条（丁）|54
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-3 晶体管| MOSFET的| P通道| 150伏五（巴西）直| 7A条（丁）|
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-210AC 晶体管| MOSFET的| N沟道| 500V五（巴西）直|3A条（丁）|10AC
TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-220 晶体管| MOSFET的| P通道| 500V五（巴西）直| 5A条（丁）|220
|
MITSUMI ELECTRIC CO., LTD.
Infineon Technologies AG
HIROSE ELECTRIC Co., Ltd.
|
| IRF630S 6059 |
From old datasheet system
N - CHANNEL 200V - 0.35 -9A-D 2 PAK MESH OVERLAY TM MOSFET
N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET
N - CHANNEL 200V - 0.35 Ohm -9A-D 2 PAK MESH OVERLAY MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| FQI10N20 FQB10N20 FQB10N20TM |
200V N-Channel QFET
200V N-Channel MOSFET
CAP 2200PF 100V 10% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
|
http://
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| IRFB42N20D |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=200V/ Rds(on)max=0.055ohm/ Id=44A)
|
International Rectifier
|
| IRC640 |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
|
IRF[International Rectifier]
|
| FQA19N20C |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFU230B IRFR230B IRFU230BTLTUFP001 |
200V N-Channel B-FET / Substitute of IRFU230A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
