| PART |
Description |
Maker |
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
| MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 500 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| 2SK735 |
FAST SWITCHING N-CHANNEL SILICON POWER MOS FET 快速切换N沟道功率MOS FET
|
NEC, Corp.
NEC[NEC]
|
| BUK9MHH-65PNN |
Dual TrenchPLUS FET Logic Level FET
|
NXP Semiconductors N.V.
|
| MTM86627A |
Silicon P-channel MOS FET (FET)
|
Panasonic
|
| PMV60EN PMV60EN-01 |
uTrenchMOS tm enhanced logic level FET
N-channel TrenchMOS logic level FET
3M SCOTCHCAST ELECTRICAL RESIN 5 (16 1-LB UNITS = CARTON) RoHS Compliant: Yes
UTrenchMOS enhanced logic level FET
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FX6ASJ-03-T13 FX6ASJ-03 |
Transistors>Switching/MOSFETs
High-Speed Switching Use Pch Power MOS FET 高速开关使用沟道功率MOS FET
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
