PART |
Description |
Maker |
MX29F100TTC-12 MX29F100TTA-12 |
1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY 64K X 16 FLASH 5V PROM, 120 ns, PDSO48
|
Macronix International Co., Ltd.
|
27L1000-25 |
1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM 100万位[128Kx8]低电压工作的CMOS存储
|
Macronix International Co., Ltd.
|
K6R1004C1D-JCI10_12 K6R1004C1D-JCI10 K6R1004C1D-JC |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
WMS128K8-17FEMA WMS128K8-17FMA WMS128K8-35CLC WMS1 |
SRAM|128KX8|CMOS|FP|32PIN|CERAMIC 静态存储器| 128KX8 |的CMOS |计划生育| 32脚|陶瓷 SRAM|128KX8|CMOS|FP|36PIN|CERAMIC 静态存储器| 128KX8 |的CMOS |计划生育| 36PIN |陶瓷 SRAM|128KX8|CMOS|SOJ|32PIN|CERAMIC 静态存储器| 128KX8 |的CMOS | SOJ | 32脚|陶瓷 SRAM|128KX8|CMOS|LLCC|32PIN|CERAMIC 静态存储器| 128KX8 |的CMOS | LLCC | 32脚|陶瓷
|
Renesas Electronics, Corp. AUK, Corp. Raltron Electronics, Corp. Electronic Theatre Controls, Inc. Epson (China) Co., Ltd.
|
AS7C31024A-10JC AS7C31024A-10JI AS7C31024A-10TC AS |
3.3V 128KX8 CMOS SRAM (Evolutionary Pinout)(3.3V 128KX8 CMOS 静态RAM(改进的引脚 5V/3.3V 128K x 8 CMOS SRAM (Evolutionary Pinout) 5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout)
|
Alliance Semiconductor Corporation ETC
|
KM681000EL KM681000ELG-7L |
128Kx8 bit Low Power CMOS Static RAM
|
SAMSUNG
|
IS61C6416 IS61C6416-10K IS61C6416-10T IS61C6416-12 |
64K x 16 HIGH-SPEED CMOS STATIC RAM IC,SRAM,64KX16,CMOS,SOJ,44PIN,PLASTIC
|
Integrated Silicon Solution, Inc. Integrated Silicon Solution Inc ETC[ETC] ISSI[Integrated Silicon Solution, Inc]
|
N01L0818L1A |
1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit
|
NanoAmp Solutions
|
K6X1008T2D-TF85 K6X1008T2D K6X1008T2D-GF70 K6X1008 |
128Kx8 bit Low Power CMOS Static RAM 128Kx8位低功耗CMOS静态RAM SPST to 4PST Slide DIP Switches
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
AM29LV001BB-45RFI AM29LV001BB-45RFIB AM29LV001BB-4 |
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1兆位28亩8位)的CMOS 3.0伏,只引导扇区闪 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 128K X 8 FLASH 3V PROM, 55 ns, PDSO32 64KX16,TSOP(II)44,IND,SRAM
|
http:// Advanced Micro Devices, Inc.
|