| PART |
Description |
Maker |
| MGF0911A 0911A |
From old datasheet system
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| HIP4081A HIP4081AIB HIP4081AIP |
30000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN 80V/2.5A峰值，高频全桥FET驱动
80V/2.5A Peak/ High Frequency Full Bridge FET Driver
80V/2.5A Peak, High Frequency Full Bridge FET Driver
|
HARRIS SEMICONDUCTOR
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| NE8500100 NE8500100-RG NE8500100-WB NE500100 NE500 |
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| HIP4080A04 HIP4080AIBZ HIP4080AIPZ HIP4080AIP HIP4 |
80V/2.5A Peak, High Frequency Full Bridge FET Driver 1.4 A FULL BRDG BASED MOSFET DRIVER, PDIP20
80V/2.5A Peak, High Frequency Full Bridge FET Driver 1.4 A FULL BRDG BASED MOSFET DRIVER, PDSO20
80V/2.5A Peak, High Frequency Full Bridge FET Driver with Charge Pump and Input Comparators; Temperature Range: -40°C to 85°C; Package: 20-SOIC T&R 1.4 A FULL BRDG BASED MOSFET DRIVER, PDSO20
Driver, Full Bridge FET, Complementry N-Channel Outputs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FLL21E010MK |
High Voltage - High Power GaAs FET 高电高功率GaAs场效应管
|
Sumitomo Electric Industries, Ltd.
|
| FLL21E040IK |
High Voltage - High Power GaAs FET 高电高功率GaAs场效应管
|
Sumitomo Electric Industries, Ltd.
|
| FLL21E090IK |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL21E045IY |
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| SPW |
Special Purpose, High Frequency Load (Tubes), High Stability and Excellent High Frequency Characteristics, Particularly Suited for High Frequency Applications
|
Vishay
|
| FLL357ME |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
| MSC8001 |
From old datasheet system
HIGH POWER GaAs FET
|
Advanced Semiconductor
ASI
|
| FLL107ME |
L-BAND MEDIUM & HIGH POWER GAAS FET
|
Fujitsu Microelectronics
|
