PART |
Description |
Maker |
K4F641612D-TI K4F661612D-TI K4F661612D-TP K4F64161 |
4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM416C1200C KM416V1200C KM416V1000C KM416C1000C |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K4F641612E K4F661612E |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
|
SAMSUNG[Samsung semiconductor]
|
KM416V254D |
256K x 16Bit CMOS Dynamic RAM with Extended Data Out 256 × 16Bit的CMOS动态RAM的扩展数据输
|
Samsung Semiconductor Co., Ltd.
|
K4E641611D-TC50 K4E661611D-TC50 K4E641611D-TC60 K4 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out 4M X 16 EDO DRAM, 50 ns, PDSO50
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM416V4100B KM416V4000B KM416V4000BS-6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
KM416V4100C KM416V4000C KM416V4100CS-L5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
KM416C1000C |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung semiconductor
|
KM48V8104C KM48V8004C KM48V8104CK-45 KM48V8104CKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 45ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
GM71V18163C GM71V18163C-5 GM71V18163C-6 GM71V18163 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor
|
GM72V661641D GM72V661641DI GM72V661641DLI |
1,048,576WORD X 16BIT X 4BANK SYNCHRONOUS DYNAMIC RAM 1,048,576字16Bit的X 4BANK同步动态RAM
|
Electronic Theatre Controls, Inc. ETC List of Unclassifed Manufacturers
|