| PART |
Description |
Maker |
| GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| HYB514400BJ-BT60 Q67100-Q749 Q67100-Q750 Q67100-Q7 |
1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM 1M X 4 FAST PAGE DRAM, 70 ns, PDSO20
1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM 1M X 4 FAST PAGE DRAM, 80 ns, PDSO20
RES 121-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA
|
SIEMENS AG
Siemens Semiconductor G...
|
| K4E160411D K4E160412D K4E170411D K4E170412D K4E167 |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4E151611 K4E151611D K4E151612D K4E171611D K4E1716 |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HYB314400BJ-50- HYB314400BJ-60 |
1M x 4-Bit Dynamic RAM
1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4动RAM(快速页面模)
|
SIEMENS AG
|
| M38503E4SS M38503MXH M37516RSS M38504E6FP M38504E6 |
RAM size:768 bytes; single-chip 8-bit CMOS microcomputer
RAM size:896 bytes; single-chip 8-bit CMOS microcomputer
RAM size:192 bytes; single-chip 8-bit CMOS microcomputer
RAM size:256 bytes; single-chip 8-bit CMOS microcomputer
Single Chip 8-Bit CMOS Microcomputer
3850 Series Microcontrollers: General Purpose with A/D Converter
RAM size:1536 bytes; single-chip 8-bit CMOS microcomputer
RAM size:640 bytes; single-chip 8-bit CMOS microcomputer
RAM size:384 bytes; single-chip 8-bit CMOS microcomputer
RAM size:512 bytes; single-chip 8-bit CMOS microcomputer
RAM size:1024 bytes; single-chip 8-bit CMOS microcomputer
RAM size:2048 bytes; single-chip 8-bit CMOS microcomputer
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MK4027J-2 MK4027J-3 MK4027N-2 MK4027N-3 MK4027-3 M |
4096x1-bit dynamic RAM, 120ns acces time. 320ns cycle.
4096 X 1 BIT DYNAMIC RAM 4096 × 1位动态随机存储器
LED YEL RECT MODULAR VERT
From old datasheet system
|
Mostek
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| M38259EFDFP M38258E4-FP M38258E4-FS M38258E4-GP M3 |
3825 Series Microcontrollers: On-Chip Segment LCDDrivers with A-D Converter
RAM size: 1536 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 192 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 256 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 384 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 512 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 1024 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 640 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 768 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 896 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 2048 bytes; single-chip 8-bit CMOS microcomputer
|
Mitsubishi Electric Corporation
|
| IC41SV44052 IC41SV44054 IC41SV44052-70J IC41SV4405 |
DYNAMIC RAM, FPM DRAM
4Mx4 bit Dynamic RAM with Fast Page Mode
|
ICSI[Integrated Circuit Solution Inc]
http://
|
| MB81117422A-125 |
CMOS 2×2M ×4 Bit
Synchronous Dynamic RAM(CMOS 2×2M ×4 位同步动态RAM)
|
Fujitsu Limited
|
| MB81117822A-84 MB81117822A-125 |
CMOS 2×1M ×8 Bit
Synchronous Dynamic RAM(CMOS 2×1M ×8 位同步动态RAM)
|
Fujitsu Limited
|
| HYB5118160BSJ-50- HYB3118160BSJ-50 HYB3118160BSJ-6 |
1M x 16-Bit Dynamic RAM 1k Refresh 100万16位动态随机存储器经销商刷
1M×16-Bit Dynamic RAM(1M×16动态RAM(快速页面模)
|
Siemens Semiconductor Group
SIEMENS AG
|
