PART |
Description |
Maker |
IRF7303PBF IRF7303PBF-15 |
GENERATION V TECHNOLOGY HEXFET Power MOSFET (VDSS = 30V , RDS(on) = 0.050ヘ ) HEXFET Power MOSFET (VDSS = 30V , RDS(on) = 0.050Ω )
|
International Rectifier
|
IRF7306PBF |
GENERATION V TECHNOLOGY
|
International Rectifier
|
IRLML5103TRPBF |
Generation V Technology
|
TY Semiconductor Co., L...
|
IRLMS6702 IRLMS6702TR |
Generation V Technology HEXFET Power MOSFET
|
International Rectifier
|
IDT8T49N004I |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
SGB10N60A07 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGW15N120 SGP15N120 SGP15N12009 SGW15N120FKSA1 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG Infineon Technologies A...
|
SGW15N60 SGP15N60 SGP15N6008 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGP10N60A SGW10N60A SGP10N60A09 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGB04N60 SGB04N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGB02N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|