| PART |
Description |
Maker |
| UPF1010 |
Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS
|
CREE
|
| SD5000I-2 |
N-Channel Lateral DMOS FET(最小漏源击穿电0V，最大阈值电.5V的N沟道增强型MOSFET)
|
Vishay Intertechnology,Inc.
|
| 2SK30A-R 2SK30A-Y 2N4303 2N3686A 2N5717 2N5718 2SK |
TRANSISTOR | JFET | N-CHANNEL | 6.5MA I(DSS) | TO-92
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | JFET | N-CHANNEL | 1.2MA I(DSS) | TO-72
TRANSISTOR | JFET | N-CHANNEL | 800UA I(DSS) | TO-92
TRANSISTOR | JFET | N-CHANNEL | 30V V(BR)DSS | 15MA I(DSS) | TO-106 晶体管|场效应| N沟道| 30V的五（巴西）直| 15mA的我（直）|106
|
EPCOS AG
|
| 2N3823 MQ2N3821 |
N-CHANNEL J-FET DEPLETION MODE
N Channel JFET; Package: TO-72; VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-206AF
|
Microsemi Corporation
Microsemi, Corp.
|
| SST440 SST440-1 SST441 |
N-Channel JFET Monolithic Dual 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
|
CALOGIC[Calogic, LLC]
|
| MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc
MOTOROLA
|
| J_SST201 SST202 SST204 J201 SST201 J_SST202 J_SST2 |
HIGH GAIN N-CHANNEL JFET
Low Noise, Single, N-Channel JFET Amplifier
|
Linear Systems
LINEAR[Linear Integrated Systems]
|
| MPF111 MPF112 MPF110 TP3329 |
TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 20MA I(DSS) | TO-92
TRANSISTOR | JFET | N-CHANNEL | 25V V(BR)DSS | 20MA I(DSS) | TO-92
TRANSISTOR | JFET | N-CHANNEL | 20MA I(DSS) | TO-92
TRANSISTOR | JFET | P-CHANNEL | 3MA I(DSS) | TO-92 晶体管|场效应| P通道| 3mA的我（直）|92
|
Electronic Theatre Controls, Inc.
|
| 2N4340 2N4341 2N4338 2N4338-41 X2N4338-41 2N4339 X |
N-Channel JFET Low Noise Amplifier N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18
|
CALOGIC[Calogic LLC]
CALOGIC[Calogic, LLC]
|
| MRF18030BR3 MRF18030BSR3 MRF1803BR3 MRF1803BSR3 MR |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
|
Motorola, Inc
|
| MMBFJ175L MMBFJ175LT1 MMBFJ175LT1-D |
Small Signal JFET P-Channel
JFET Chopper P-Channel - Depletion
|
ON Semiconductor
|
