| PART |
Description |
Maker |
| PCF50732 PCF50732H |
Baseband and audio interface for GSM
|
NXP Semiconductors
|
| CX805-30 |
Baseband Processor for Multiband GSM / GPRS Applications
|
Skyworks Solutions
|
| AD6432 AD6432AST |
GSM 3 V Transceiver IF Subsystem
Ceramic Multilayer Capacitor; Capacitance:100000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Series:20110; Packaging:Cut Tape TELECOM, CELLULAR, BASEBAND CIRCUIT, PQFP44
|
Analog Devices, Inc.
|
| GSA8821 |
I-Bar Penta-band GSM Antenna Works with GSM / CDMA / PCS / DCS /UMTS/ WCDMA
|
List of Unclassifed Man...
|
| GSA8821B301721 |
I-Bar Penta-band GSM Antenna Works with GSM / CDMA / PCS / DCS /UMTS/ WCDMA
|
List of Unclassifed Man...
|
| MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| BCM4328 BCM2153 BCM59001 BCM2048 |
SINGLE CHIP IEEE 802.11a/b/g MAC/BASEBAND/RADIO WITH INTEGRATED BLUETOOTH 2.1 EDR AND FM RECEIVER FOR LOW-POWER MOBILE HANDSET
7.2-MBPS HEDGE 65-nm MULTIMEDIA BASEBAND PROCESSOR
|
BOARDCOM[Broadcom Corporation.]
|
| MWIC930 |
MWIC930R1, MWIC930GR1 N-CDMA, W-CDMA, GSM/GSM EDGE, 746-960 MHz, 30 W, 26-28 V RF LDMOS Integrated Power Amplifiers
|
Motorola
|
| MRF18085AR3 MRF18085ALSR3 |
RF Power Field Effect Transistors
GSM/GSM EDGE 1.80–1.88 GHz, 85 W, 26 V Lateral N–Channel RF Power MOSFET
|
Motorola, Inc.
MOTOROLA[Motorola Inc]
Freescale (Motorola)
|
| MRF18085A MRF18085AR3 MRF18085ALSR3 |
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF18085A, MRF18085AR3, MRF18085ALSR3 GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
http://
MOTOROLA[Motorola, Inc]
|
