| PART |
Description |
Maker |
| Q68000-A8882 CGY180 |
Power Amplifier (DECT, PCS)
From old datasheet system
GaAs MMIC (Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| LA42102 |
10 W, 2 CHANNEL, AUDIO AMPLIFIER, SFM13
Monolithic Linear IC Audio Output for TV application 10W 2ch Power Amplifier
Monolithic Linear IC Audio Output for TV application 10W 】 2ch Power Amplifier
Monolithic Linear IC Audio Output for TV application 10W × 2ch Power Amplifier
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| KSD-T0D013-000 |
Power amplifier application
|
KODENSHI KOREA CORP.
|
| 2SB688 |
HIGH POWER AMPLIFIER APPLICATION
|
Unisonic Technologies
|
| 2SD718 |
HIGH POWER AMPLIFIER APPLICATION
|
UTC
|
| 2SA129807 |
Low Frequency Power Amplifier Application Power Switching Applications
|
Toshiba Semiconductor
|
| 2SA1298 |
Transistor Silicon PNP Epitaxial (PCT process) Low Frequency Power Amplifier Application Power Switching Applications
|
TOSHIBA
|
| 2SK1529 E001354 |
HIGH POWER AMPLIFIER APPLICATION
From old datasheet system
|
Toshiba
|
| 2SA1981SF |
PNP Silicon Transistor (Audio power amplifier application)
|
AUK[AUK corp]
|
| MRF421 |
Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz
|
New Jersey Semi-Conduct...
|
| 2SB1429 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER APPLICATION
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SJ313 |
P CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
