| PART |
Description |
Maker |
| 2SB904 |
PNP Epitaxial Planar Silicon Transistors 30V/12A High-Speed Switching Applications
|
SANYO
|
| 2SB1468 2SD2219 |
30V/8A High-Speed Switching Applications 30V/8A高速开关应
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| RJK5012DPP-E0T2 RJK5012DPP-E0-15 |
500V - 12A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SB919 2SD1235 2SB919S 2SD1235R |
30V/8A High-Speed Switching Applications 30V/8A高速开关应
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 8A I(C) | TO-220AB
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 8A I(C) | TO-218VAR 晶体管|晶体管|叩| 30V的五（巴西）总裁| 8A条一（c）|18VAR
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Shindengen Electric Manufacturing Co., Ltd.
|
| 2SC3783 |
NPN TRIPLE DIFFUSED TYPE (HIGH SPEED AND HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR, HIGH SPEED DC-DC CONVERTER APPLICATIONS) npn型三重扩散型（高速，高压开关，开关稳压器，高速DC - DC转换器应用）
NPN TRIPLE DIFFUSED TYPE (HIGH SPEED AND HIGH VOLTAGE SWITCHING SWITCHING REGULATOR HIGH SPEED DC-DC CONVERTER APPLICATIONS)
NPN TRIPLE DIFFUSED TYPE (HIGH SPEED AND HIGH VOLTAGE SWITCHING/ SWITCHING REGULATOR/ HIGH SPEED DC-DC CONVERTER APPLICATIONS)
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| RJK03N5DPA |
30V, 45A, 2.9m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N1DPA |
30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| UB3010 |
N-Ch 30V Fast Switching MOSFETs
N-Ch 30V Fast Switching MOSFETs Advanced high cell density Trench technology
|
Unitpower Technology Limited
Unitpower Technology Li...
|
| FS2VS-12 |
Solid-State Panel Mount Relay; Output Device:SCR; Output Voltage Max:280Vrms; Output Voltage Min:24Vrms; Control Voltage Max:140Vrms; Control Voltage Min:90Vrms; Load Current Max:12A; Switching:Random; Switch Function:SPST-NO RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| 2SC4203 E000913 |
EPITAXIAL PLANAR TYPE (VIDEO OUTPUT FOR HIGH DEFINITION VDT HIGH SPEED SWITCHING APPLICATIONS)
From old datasheet system
VODEO OUTPUT FOE HIGH DEFINTION VDT HIGH SPEED SWITCHING APPLICATIONS
|
Toshiba Semiconductor
|
| MG600Q1US41 E002366 |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
From old datasheet system
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SK2035 E001424 |
HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCHING APPLICATIONS
From old datasheet system
N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCHING APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
