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  w shield Datasheet PDF File

For w shield Found Datasheets File :: 2619    Search Time::3.031ms    
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    HCPL-0710 HCPL-0710500

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. HCPL-0710 HCPL-0710500
OCR Text ...MHz Note 9, 10, 11 9 12 C/w Thermocouple located at center underside of package mw are tolerable within the application. For ins...shield SIGNAL POwER V+ (SIGNAL) V- (SIGNAL) V+ (POwER) V- (POwER) NETwORK POwER SUPPLY Figure ...
Description 40 ns Prop. Delay, SO-8 Optocoupler

File Size 269.02K  /  16 Page

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    TLP554

Toshiba, Corp.
Toshiba Semiconductor
Part No. TLP554
OCR Text ...19 3/4 -2.0 3/4 0.8 3/4 3/4 pF w V mA 3/4 3/4 (Note 6) 2.0 3/4 3/4 5x1010 3/4 3/4 VS=0 , f=1MHz , Ta=25 VS=500V , Ta=25 , R.H. 60% (Note 6) No pull up resistor required as the device has an internal pull up resistor. 3 ...
Description CAP 东芝光耦合器的GaAIAs登记合格决定
TOSHIBA PHOTOCOUPLER GaAlAs IRED & PHOTO-IC

File Size 400.48K  /  8 Page

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    2SK522

Hitachi Semiconductor
Part No. 2SK522
OCR Text ....0 Pc h = 20 200 0 m w 100 0 50 100 150 Ambient Temperature Ta (C) 0 10 20 30 40 Drain to Source Voltage VDS (V) ...shield D.U.T. L1 C2 3.0 L2 4,700 50 1,000 V.V VDD Unit R : C : pF C1, C2 : 0 to 30pF Max V...
Description Silicon N-Channel Junction FET

File Size 35.94K  /  8 Page

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    GT16-30PCF28 GT16CB-1PP-HU GT16-_0.7-1.5PC GT16-_1.6-2.9PC GT16-_1.6-2.9SC GT16-1P-HU GT16-1S-HU GT16-2428PCF GT16-2428S

HIROSE[Hirose Electric]
Hirose Electric USA, INC.
HIROSE ELECTRIC Co., Ltd.
Part No. GT16-30PCF28 GT16CB-1PP-HU GT16-_0.7-1.5PC GT16-_1.6-2.9PC GT16-_1.6-2.9SC GT16-1P-HU GT16-1S-HU GT16-2428PCF GT16-2428SCF GT16C-_1.6-2.9SC GT16C-1P_S-R GT16C-1P-DS GT16C-1S-HU GT16-PC GT16-SC GT16-/1.6-2.9SC GT16-/1.6-2.9PC GT16-/0.7-1.5PC GT16C-/1.6-2.9SC GT16C-1P/S-R
OCR Text ...quency Performance Refer to V.S.w.R. data on the following pages. Applications In-car communication, car sensors (temperature, pressure)...shield plate) Tin plating Brass (Metal fitting) Tin plating 5 Genuine Market Panel Mounting T...
Description 1 CONTACT(S), MALE, COMBINATION LINE CONNECTOR, SURFACE MOUNT
Coaxial cable connection of Antennas/ Sensors/ and Communication Trunk Lines
Coaxial cable connection of Antennas, Sensors, and Communication Trunk Lines 在天线,传感器和通信中继同轴电缆连接

File Size 220.02K  /  9 Page

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    R2658P R2658

HAMAMATSU[Hamamatsu Corporation]
Part No. R2658P R2658
OCR Text ...CATHODE RADIANT SENSITIVITY (mA/w) QUANTUM EFFICIENCY (%) nm 10 window Material Structure Number of Stages Anode to Last Dynode Ano...shield GRILL 6 4 2 1 BULB PHOTOCATHODE DIRECTION OF LIGHT 3 1 to 9: DYNODES 5 7 12MIN. 4...
Description PHOTOMULTIPLIER TUBES

File Size 69.27K  /  4 Page

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    AD22103 AD22103K AD22103KCHIPS AD22103KR AD22103KT AD22103KRZ-RL

AD[Analog Devices]
Analog Devices, Inc.
Part No. AD22103 AD22103K AD22103KCHIPS AD22103KR AD22103KT AD22103KRZ-RL
OCR Text ... 12 10 8 6 4 2 T (SOIC) JA - C/w 250 200 (SOIC) T (TO-92) - Sec 150 100 (TO-92) 50 0 400 800 FLOw RATE - CFM ...shield the AD22103. Because the part has a voltage output (as opposed to current), it offers modest ...
Description Voltage Output 3.3 V Temperature Sensor withSignal Conditioning
3.3 V Supply Voltage Output Temperature Sensor with Signal Conditioning
3.3 V Supply, Voltage Output Temperature Sensor with Signal Conditioning
ANALOG TEMP SENSOR-VOLTAGE, 0.95V, RECTANGULAR, SURFACE MOUNT SOIC-8
3.3 V Supply/ Voltage Output Temperature Sensor with Signal Conditioning

File Size 219.42K  /  6 Page

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    ASI10832 BFW13 ASIBFW13

Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
Part No. ASI10832 BFw13 ASIBFw13
OCR Text ...to +200 C -65 C to +200 C 590 C/w O O O O 1 = SOURCE 3 = GATE 2 = DRAIN 4 = shield Order code: ASI10832 NONE CHARACTERISTICS SYMBOL IGS IDSS VGS V(P)GS IyfsI IyosI IyfsI IyosI Ciss Crs Vn VGS = 10 V TC = 25 C O TEST...
Description N-CHANNEL SILICON FET DEPLETION MODE
Transistor

File Size 14.42K  /  1 Page

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    PM400DAS060 PM400HSA12 PM800HSA06 PM75RVA060 PM400DVA060 PM100CVA120

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. PM400DAS060 PM400HSA12 PM800HSA06 PM75RVA060 PM400DVA060 PM100CVA120
OCR Text ...tion 3 4 5 2 1 U V w 6 7 8 9 10 11 N TYPE R P B U V w 1. Case 2. Epoxy Resin 3. Input Signal Termina...shield layers for EMI noise immunity. Figure 6.4 shows the structure of a ceramic isolated Intellige...
Description USING INTELLIGENT POwER MODULES
FLAT-BASE TYPE INSULATED PACKAGE

File Size 922.36K  /  31 Page

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    PP225D060

POWEREX[Powerex Power Semiconductors]
Part No. PP225D060
OCR Text ...n Typ 0.29 Max 0.43 0.9 Units C/w C/w C/w C/w in-lb in-lb in-lb lb PP225D060(-) -3- TENTATIVE Powerex, Inc., 200 Hillis Street, Yo...shield PwM Phase Error PwM + Overtemp1 24 VDC input power2 24 VDC input power 2 1 Description Co...
Description POw-R-PAK 200A / 1200V 3 phase IGBT Assembly

File Size 360.12K  /  6 Page

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    PP225D120

POWEREX[Powerex Power Semiconductors]
Part No. PP225D120
OCR Text ... Typ 0.19 Max 0.28 0.47 Units C/w C/w C/w C/w in-lb in-lb in-lb lb PP225D120 (-) -3- TENTATIVE Powerex, Inc., 200 Hillis Street, Y...shield PwM Phase Error PwM + Overtemp1 24 VDC input power2 24 VDC input power 2 1 Description Co...
Description POw-R-PAK 225A / 1200V Half Bridge IGBT Assembly

File Size 360.25K  /  6 Page

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