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  ssts Datasheet PDF File

For ssts Found Datasheets File :: 9    Search Time::3.265ms    
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    Silicon Storage Technology, Inc.
Part No. SST29EE010A-90-4C-PH SST29EE010A-120-4C-U2 SST29LE010A-200-4C-U2 SST29VE010A-250-4C-U2 SST29LE010A-200-4C-NH SST29LE010A-200-4C-EH SST29VE010A-200-4I-WH SST29VE010A-200-4I-EH SST29EE010A-90-4I-NH SST29EE010A-90-4C-EH SST29EE010A-90-4C-NH SST29EE010A-90-4C-WH SST29EE010A-120-4C-WH SST29EE010A-120-4I-NH SST29EE010A-120-4C-PH SST29EE010A-120-4C-NH SST29LE010A-200-4C-WH SST29EE010A-120-4I-EH SST29LE010A-150-4C-WH SST29LE010A-150-4I-WH SST29LE010A-150-4C-EH SST29VE010A-200-4C-WH
OCR Text ...write eeproms manufactured with ssts proprietary, high performance cmos superflash tech- nology. the split-gate cell design and thick oxide tunnel- ing injector attain better reliability and manufacturability compared with alternate approac...
Description 4 Mbit (512K x 8/256K x 16) nvSRAM
128Kx8 EEPROM 128Kx8 EEPROM

File Size 322.54K  /  26 Page

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    Golledge Electronics, Ltd.
Silicon Storage Technology, Inc.
Lumex, Inc.
Part No. SST30VR021-500-C-KH SST30VR021-500-E-KH SST30VR021-500-I-KH
OCR Text ... the device is fabricated using ssts advanced cmos low power processing technology. ? low power dissipation: C standby 3.0v operation: 3 w (typical) C operating 3.0v operation: 10 mw (typical) ? fully static operation C no clock or refresh ...
Description Input/Output (I/O); Supply Voltage: 2.4V to 5.25V; Temperature Range: -40&deg; to 85&deg;C; Package: 8-SOIC; Features: 4 Configurable I/Os 的SRAM /光盘
SRAM/ROM 的SRAM /光盘

File Size 135.60K  /  12 Page

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    Silicon Storage Technology, Inc.
Part No. SST30VR023-500-C-KH SST30VR023-500-E-KH SST30VR023-500-I-WH SST30VR023-500-I-KH
OCR Text ... the device is fabricated using ssts advanced cmos low power processing technology. ? low power dissipation: C standby 3.0v operation: 3 w (typical) C operating 3.0v operation: 10 mw (typical) ? fully static operation C no clock or refresh ...
Description Input/Output (I/O); Supply Voltage: 2.4V to 5.25V; Temperature Range: -40° to 85°C; Package: 16-QFN (16-COL); Features: 8 Configurable I/Os
SRAM/ROM 的SRAM /光盘
Input/Output (I/O); Supply Voltage: 2.4V to 5.25V; Temperature Range: -40&deg; to 85&deg;C; Package: 16-QFN (16-COL); Features: 8 Configurable I/Os

File Size 135.89K  /  12 Page

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    Silicon Storage Technology, Inc.
Part No. SST30VR043-500-C-EH SST30VR043-500-C-KH SST30VR043-500-E-KH SST30VR043-500-E-EH SST30VR043-500-I-EH SST30VR043-500-I-KH
OCR Text ... the device is fabricated using ssts advanced cmos low power process technology. ? fully static operation C no clock or refresh required ? three state outputs ? packages available C 32-pin tsop (8mm x 20mm) C 32-pin stsop (8mm x13.4mm) the ...
Description -bit AVR Microcontroller with 8K Bytes In- System Programmable Flash
3.3V RoboClock® Low Voltage Programmable Skew Clock Buffer
TetraHub™ High-Speed USB Hub Controller
Low-Cost 3.3V Zero Delay Buffer
IC USB HOST/PERIPH CNTRL 的SRAM /光盘
3.3V RoboClock&#174; Low Voltage Programmable Skew Clock Buffer
TetraHub&#153; High-Speed USB Hub Controller

File Size 130.01K  /  12 Page

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    Silicon Storage Technology, Inc.
Part No. SST39VF160-90-4C-SJ SST39VF800-70-4C-SJ SST39VF800-90-4C-SJ SST39LF800-55-4C-EK SST39VF160-70-4C-SJ SST39LF800-55-4C-SJ SST39VF800-70-4I-SJ SST39LF800-55-4C-BK SST39VF800-90-4I-SJ SST39LF160-55-4C-SJ
OCR Text ...e flash (mpf) manufactured with ssts proprietary, high perfor- mance cmos superflash technology. the split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approache...
Description PSoC™ Mixed Signal Array
EZ-USB SX2™ High-Speed USB Interface Device
MoBL-USB™ TX2 USB 2.0 UTMI Transceiver
2.5V or 3.3V, 200-MHz, 1:18 Clock Distribution Buffer
PSoC® Mixed-Signal Array
x16 Flash EEPROM x16闪存EEPROM

File Size 324.98K  /  24 Page

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    Silicon Storage Technology
Part No. SST39SF020
OCR Text ...e flash (mpf) manufactured with ssts proprietary, high performance cmos superflash technology. the split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches....
Description 2 Megabit (256K x 8) Multi-Purpose Flash

File Size 287.60K  /  23 Page

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    Silicon Storage Technology
Part No. SST28VF040
OCR Text ...8vf040 are manufactured us- ing ssts proprietary, high performance cmos superflash eeprom technology. the split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna- tive ...
Description (SST28xF040) 4 Mbit (512K x8) SuperFlash EEPROM

File Size 309.56K  /  28 Page

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    SSTS30100CTF

Silikron Semiconductor Co.,LTD.
Silikron Semiconductor ...
Part No. ssts30100CTF
OCR Text ...0f ss ts 30100 ctf to22 0 ssts 30100 ct schematic d iagram ss ts ...
Description High Junction Temperature High ESD Protection High Forward & Reverse Surge capability
   High Junction Temperature High ESD Protection High Forward & Reverse Surge capability

File Size 384.61K  /  6 Page

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