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Freescale (Motorola)
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| Part No. |
mrf18060blsr3 MRF18060BR3 MRF18060BSR3
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| OCR Text |
mrf18060blsr3 1 rf device data freescale semiconductor rf power field effect transistor n ? channel enhancement ? mode lateral mosfet designed for pcn and pcs base station applications with frequencies from 1800 to 2000 mhz. suitable for f... |
| Description |
1.90–1.99 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFET
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| File Size |
220.83K /
12 Page |
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Motorola
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| Part No. |
MRF18060BSR3 mrf18060blsr3 MRF18060BR3 MRF18060B
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| OCR Text |
...nhancement-Mode Lateral MOSFETs mrf18060blsr3 Designed for PCN and PCS base station applications with frequencies from MRF18060BSR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
The RF MOSFET Line
applications. To... |
| Description |
1.90?1.99 GHz, 60 W, 26 V Lateral N?Channel RF Power MOSFET
From old datasheet system
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| File Size |
350.53K /
8 Page |
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Motorola, Inc.
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF18060B mrf18060blsr3 MRF18060BR3 MRF18060BSR3
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| OCR Text |
...ETs
MRF18060BR3 MRF18060BSR3 mrf18060blsr3
1.90 - 1.99 GHz, 60 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465 - 06, STYLE 1 NI - 780 MRF18060BR3
CASE 465A - 06, STYLE 1 NI - 780S MRF18060B... |
| Description |
HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes
RF Power Field Effect Transistors
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| File Size |
486.59K /
8 Page |
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it Online |
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