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  high temperature low frequency Datasheet PDF File

For high temperature low frequency Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    Illinois Capacitor, Inc...
Part No. 567UVG010MFBJ 187UVG016MFBJ
Description high temperature ?Very low ESR ?high ripple current ?stable with temperature ?high frequency

File Size 221.25K  /  2 Page

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    Illinois Capacitor, Inc...
Part No. 157AVG063MGBJ 397AVG035MGBJ 126AVG160MGBJ 337AVG016MFF 337AVG025MFBJ
Description    Small Size - high temperature ?low ESR ?high Ripple Current ?Stable with temperature ?high frequency

File Size 309.14K  /  2 Page

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    CREE POWER
Part No. W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

File Size 273.34K  /  17 Page

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    Vishay
Part No. SPW
Description Special Purpose, high frequency Load (Tubes), high Stability and Excellent high frequency Characteristics, Particularly Suited for high frequency Applications

File Size 93.45K  /  2 Page

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    TX7-705C-S-HP

QUARTZCOM the communications company
Part No. TX7-705C-S-HP
Description high precision SMD TCXO high frequency stability vs. temperature 0.10 ppm

File Size 92.86K  /  1 Page

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    HIGHTEMP-LF

EUROQUARTZ limited
Part No. highTEMP-LF
Description high temperature/low frequency

File Size 163.03K  /  2 Page

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    SiTime Corp.
Part No. SIT1618B
Description Standard frequency, high temperature Oscillator

File Size 699.15K  /  18 Page

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    SiTime Corp.
Part No. SIT8919B
Description high frequency, high temperature Oscillator

File Size 715.04K  /  18 Page

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    Vishay
Part No. EKE
Description Aluminum Electrolytic Capacitors, Radial Style, Long Lifetime, high AC Rating, Polarized AI Electrolytic Capacitor, high C-U Product, Small Dimensions, low Impedance over high temperature and frequency Ranges

File Size 47.33K  /  6 Page

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    OCO-M36CES12 OCO-M36CES OCO-M36CES5

QUARTZCOM the communications company
Part No. OCO-M36CES12 OCO-M36CES OCO-M36CES5
Description Through hole OCXO Sine wave high frequency stability vs. temperature (up to 卤7.5 x 10-9)
Through hole OCXO Sine wave high frequency stability vs. temperature (up to ±7.5 x 10-9)

File Size 126.41K  /  1 Page

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For high temperature low frequency Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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