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  high power high frequency pres Datasheet PDF File

For high power high frequency pres Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. FD1500AV-90
Description MITSUBISHI high-frequency RECTIFIER DIODES high power, high frequency, presS PACK TYPE
600 A AC/DC CLAMP-ON DMM,TRMS RoHS Compliant: NA
high power/ high frequency/ presS PACK TYPE

File Size 50.39K  /  3 Page

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    FD2000DU-120

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
Part No. FD2000DU-120
Description MITSUBISHI high-frequency RECTIFIER DIODES high power, high frequency, presS PACK TYPE
high power/ high frequency/ presS PACK TYPE
high power, high frequency, presS PACK TYPE 高功率,高频率,按包装类

File Size 47.29K  /  3 Page

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    Vishay
Part No. SPW
Description Special Purpose, high frequency Load (Tubes), high Stability and Excellent high frequency Characteristics, Particularly Suited for high frequency Applications

File Size 93.45K  /  2 Page

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    Mitsubishi Electric Corporation
Part No. FD1000FX-90
Description MITSUBISHI high-frequency RECTIFIER DIODES high power, high frequency, presS PACK TYPE

File Size 47.92K  /  3 Page

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    Mitsubishi Electric Corporation
Part No. FD1000FH-56
Description MITSUBISHI high-frequency RECTIFIER DIODES high power, high frequency, presS PACK TYPE

File Size 43.86K  /  3 Page

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    FD1000FV-90

Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Part No. FD1000FV-90
Description MITSUBISHI high-frequency RECTIFIER DIODES high power, high frequency, presS PACK TYPE

File Size 49.42K  /  3 Page

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    FD1000FH-56

Mitsubishi Electric Semiconductor
Part No. FD1000FH-56
Description 1000 A, 2800 V, SILICON, RECTIFIER DIODE
high power, high frequency, presS PACK TYPE
high power/ high frequency/ presS PACK TYPE

File Size 40.35K  /  3 Page

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    50N06-TA3-T 50N06-TF3-T 2SA102005 2SA1797-X-AA3-R 2SA1797-X-AB3-R 2SA2016L-AB3-R 2SA733-X-AE3-R 2SA733-X-AL3-R 2SA733L-X

UNISONIC TECHNOLOGIES CO LTD
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Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
Part No. 50N06-TA3-T 50N06-TF3-T 2SA102005 2SA1797-X-AA3-R 2SA1797-X-AB3-R 2SA2016L-AB3-R 2SA733-X-AE3-R 2SA733-X-AL3-R 2SA733L-X-AE3-R 2SA73305 2SB1132-X-AB3-R 2SB1132-X-TN3-R 2SB1132-X-TN3-T 2SB1188-P-AB3-R 2SB1188-X-AB3-R 2SB1188L-X-AB3-R 2SB1202-X-TN3-T 2SB1202L-X-T6C-K 2SB1202L-X-TM3-T 2SB1260-X-TN3-R 2SB1260-X-TN3-T 2SB1386-X-AB3-F-R 2SB1386L-X-AB3-F-R 2SB857-X-T6C-K 2SB857-X-TN3-R 2SB857-X-TN3-T 2SC1815-X-T92-A-B 2SC1815-X-T92-A-K 2SC1815L-X-T92-A-B 2SC181505 2SC3838-X-AE3-R 2SC3838-X-AL3-R 2SC3838L-X-AE3-R 2SC4774-AL3-R 2SC4793-TF3-T 2SC4793L-TF3-T 2SC5027-X-TA3-T 2SC5027-X-TF3-T 2SC5027E-X-TA3-T 2SC5027E-X-TF3-T 2SC5027EL-X-TA3-T 2SC5027L-X-TA3-T 2SC5353-TA3-T 2SC5353-TF3-T 2SD1804-X-TM3-T 2SD1804-X-TN3-R 2SD1804-X-TN3-T 2SD1816-X-TM3-F-T 2SD1816-X-TN3-F-K 2SD1816-X-TN3-F-R 2SD1857-X-T92-B 2SD1857-X-T92-K 2SD1857-X-T9N-B 2SD313-C-TA3-T 2SD313L-X-TA3-T 2SD882-X-T60-K 2SD882-X-TM3-T 2SD882S-X-AA3-R 2SD882S-X-AB3-R 2SD882S-X-T92-B 2SD882SS-Q-AE3-R 2SD882SSL-X-AE3-R BA6208-D08-T BA6208-G09-T BA6208-S08-R 2SA1020L-Y-T9N-R 2SA1020L-O-AB3-B 2SA1020L-O-AB3-K 2SA1020L-O-AB3-R 2SA1020L-O-T9N-B 2SA1020L-O-T9N-K 2SA1020L-O-T9N-R 2SA1020L-X-AB3-R 2SA1020L-X-T9N-B 2SA1020L-X-T9N-K 2SA1020L-Y-AB3
Description SILICON PNP EPITAXIAL TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
SILICON PNP EPITAXIAL TRANSISTOR 进步党硅外延晶体
REVERSIBLE MOTOR DRIVER
NPN EPITAXIAL PLANAR TRANSISTOR
high CURRENT SWITCHIG APPLICATIONS
high CURRENT SWITCHING APPLICATIONS
high VOLTAGE NPN TRANSISTOR
high VOLTAGE AND high RELIABILITY TRANSISTOR
NPN SILICON TRANSISTOR
high frequency AMPLIFIER TRANSISTOR, RF SWITCHING (6V, 50mA)
high-frequency AMPLIFIER TRANSISTOR
AUDIO frequency AMPLIFIER high frequency OSC NPN TRANSISTOR
SILICON PNP TRANSISTOR
LOW frequency PNP TRANSISTOR
MEDIUM power LOW VOLTAGE TRANSISTOR
MEDIUM power TRANSISTOR
LOW frequency AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR
PNP EPITAXIAL PLANAR TRANSISTOR
50 Amps, 60 Volts N-CHANNEL power MOSFET

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    MC08ED150J-F MC08CA020D-F MC08CA050D-F MC08CA060D-F MC08CA100D-F MC12ED240J-F MC12CF070D-F MC08FA560J-F MC12FF500J-F MC1

Cornell Dubilier Electronics, Inc.
http://
Cornell Dubilier Electronic...
Cornell Dubilier Electr...
Part No. MC08ED150J-F MC08CA020D-F MC08CA050D-F MC08CA060D-F MC08CA100D-F MC12ED240J-F MC12CF070D-F MC08FA560J-F MC12FF500J-F MC12FF330J-F MC22FF331J-F MC22FF620J-F MC22FF750J-F MC22FF391J-F MC12FA331J-F MC18FA331J-F MC18FD331J-F MC12ED220J-F MC22FF251J-F MC08FA910J-F MC12FA910J-F MC22FA911J-F MC12FD131J-F MC12CF040D-F MC12FA201J-F MC18FD161J-F MC08EA200J-F MC12FF360J-F MC12FF430J-F MC08FA330J-F MC12FA161J-F MC22FF161J-F MC12CD100D-F MC22FA102J-F MC22FA202J-F MC22FA152J-F MC22FF152J-F MC12FD330J-F MC08FA101J-F MC12FA101J-F MC22FA222J-F MC12FA251J-F MC18FA251J-F MC12FA431J-F MC12FD430J-F MC12CF100D-F MC18FD201J-F MC22FF201J-F MC08CD020D-F MC22FA182J-F MC12FD151J-F MC22FF151J-F MC12FA151J-F MC18FD251J-F MC08EA240J-F MC08EA120J-F MC12FA111J-F MC18FD301J-F MC22FF510J-F MC12FD560J-F MC22FD561J-F MC12FD470J-F MC18FA561J-F MC18FA431J-F MC18FD431J-F MC22FF431J-F MC12CF080D-F MC12ED150J-F MC08FA390J-F MC22FF301J-F MC12FA391J-F MC18FA391J-F MC18FD391J-F MC12CF090D-F MC18FD181J-F MC18FA271J-F MC18FA471J-F MC12FA271J-F MC22FF471J-F MC18FD471J-F MC08CD100D-F MC08FA470J-F MC12FA470J-F MC22FF501J-F MC22FF121J-F MC22FF122J-F MC22FF560J-F MC12FD360J-F MC22FF561J-F MC12FA181J-F MC18FA681J-F MC12CF060D-F MC12
Description Multilayer RF Capacitors high-frequency, high-power, high-Voltage Chips with Nonmagnetic Option

File Size 426.42K  /  9 Page

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    CREE power
Part No. W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

File Size 273.34K  /  17 Page

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