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  h.m.b-19 Datasheet PDF File

For h.m.b-19 Found Datasheets File :: 38046    Search Time::8.813ms    
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    Yageo, Corp.
YAGEO CORP
Part No. CLH1608B-68NK-H CLH1005B-68NK-H CLH1005B-68NJ-H CLH1005B-8N2K-H CLH1608B-8N2K-H CLH1005B-18NK-H CLH1608B-68NJ-H CLH1005T-18NJ-H CLH1005T-8N2K-H CLH1005B-8N2J-H CLH1005T-68NJ-H CLH1608B-18NJ-H CLH1005T-68NK-H CLH1608B-8N2J-H CLH1608T-18NJ-H CLH1005B-1N8S-H CLH1005B-39NK-H CLH1608T-R15J-H CLH1005B-10NJ-H CLH1005B-10NK-N CLH1005B-10NK-H
OCR Text ... 0.6 1.2 3.0~4.0 1.0 clh1005- h clh1005- s clh1608-h clh1608-s clh1608-w series clh2012-s series clh1005-s series clh1608-s series clh1005...m h z) min. res i s t an c e c u rr en t (nh) at 100mhz at 800mhz (?) max. (ma...
Description 1 ELEMENT, 0.068 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 1608
1 ELEMENT, 0.068 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 1005
1 ELEMENT, 0.0082 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 1005
1 ELEMENT, 0.0082 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 1608
1 ELEMENT, 0.018 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 1005
1 ELEMENT, 0.018 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 1608
1 ELEMENT, 0.0018 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.039 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.15 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.01 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD

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    Toshiba
Part No. TPCA8053-H
OCR Text h 2009-08-19 1 toshiba field effect transistor silicon n-cha nnel mos type (u-mos -h) tpca8053-h switching regulator application...m (typ.) ? high forward transfer admittance: |y fs | = 46 s (typ.) ? low leakage current: i ...
Description Field Effect Transistor

File Size 200.78K  /  7 Page

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    TPCA8053-H

Toshiba Semiconductor
Part No. TPCA8053-H
OCR Text h 2009-08-19 1 toshiba field effect transistor silicon n-cha nnel mos type (u-mos -h) tpca8053-h switching regulator application...m (typ.) ? high forward transfer admittance: |y fs | = 46 s (typ.) ? low leakage current: i ...
Description TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H)

File Size 179.85K  /  7 Page

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    TPCP8103-H

Toshiba Semiconductor
Part No. TPCP8103-H
OCR Text H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra High speed U-MOSIII) TPCP8103-H High Efficiency DCDC Converter Appl...m (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 A (max...
Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra High speed U-MOSIII)

File Size 207.31K  /  4 Page

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    SUMIDA[Sumida Corporation]
http://
Part No. CDEP145-8R0NC-H CDEP134 CDEP134-0R3MB CDEP134-0R3MB-H CDEP134-0R3MC CDEP134-0R3MC-H CDEP134-0R3NB CDEP134-0R3NB-H CDEP134-0R3NC CDEP134-0R3NC-H CDEP134-0R4MB CDEP134-0R4MB-H CDEP134-0R4MC CDEP134-0R4MC-H CDEP134-0R4NB CDEP134-0R4NB-H CDEP134-0R4NC CDEP134-0R4NC-H CDEP134-0R6MB CDEP134-0R6MB-H CDEP134-0R6MC CDEP134-0R6MC-H CDEP134-0R6NB CDEP134-0R6NB-H CDEP134-0R6NC CDEP134-0R6NC-H CDEP134-0R9MB CDEP134-0R9MB-H CDEP134-0R9MC CDEP134-0R9MC-H CDEP134-0R9NB CDEP134-0R9NB-H CDEP134-0R9NC CDEP134-0R9NC-H CDEP134-1R2MB CDEP134-1R2MB-H CDEP134-1R2MC CDEP134-1R2MC-H CDEP134-1R2NB CDEP134-1R2NB-H CDEP134-1R2NC CDEP134-1R2NC-H CDEP134-1R6MB CDEP134-1R6MB-H CDEP134-1R6MC CDEP134-1R6MC-H CDEP134-1R6NB CDEP134-1R6NB-H CDEP134-1R6NC CDEP134-1R6NC-H CDEP134-1R8MB CDEP134-1R8MC CDEP134-1R8MC-H CDEP134-1R8NB CDEP134-1R8NB-H CDEP134-1R8NC CDEP134-1R8NC-H CDEP134-2R5MB CDEP134-2R5MB-H CDEP134-2R5MC CDEP134-2R5MC-H CDEP134-2R5NB CDEP134-2R5NB-H CDEP134-2R5NC CDEP134-2R5NC-H CDEP134-2R7MB CDEP134-2R7MB-H CDEP134-2R7MC CDEP134-2R7MC-H CDEP134-2R7NB CDEP134-2R7NB-H CDEP134-2R7NC CDEP134-2R7NC-H CDEP134-3R6MB CDEP134-3R6MB-H CDEP134-3R6MC CDEP134-3R6MC-H CDEP134-3R6NB CDEP134-3R6NB-H CDEP134-3R6NC CDEP134-
OCR Text ...4 (Standard Type) Parts No. L (H) D.C.R.() : Max.(Typ.) 0R3 0R4 0R6 0R9 1R2 1R6 1R8 2R5 2R7 3R6 4R8 6R0 6R4 8R0 0.3 0.4 0.66 0.9 1.2 1.6 1....M (20%) CDEP134(S) 0.4H 30% (N), 0.9H - 8.0H 20% (M) H (High power type) B (Box) N (30%) CDEP134(H...
Description POWER INDUCTORS <SMD Type>
POWER INDUCTORS
POWER INDUCTORS Type

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    TPCA8051-H

Toshiba Semiconductor
Part No. TPCA8051-H
OCR Text H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCA8051-H Switching Regulator Applications Motor Drive Applicat...M A * * * * * * * Small footprint due to a small and thin package High-speed switching Small g...
Description Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications

File Size 186.48K  /  7 Page

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    TPCA8036-H

Toshiba Semiconductor
Part No. TPCA8036-H
OCR Text H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCA8036-H High-Efficiency DC-DC Converter Applications Notebook...M A * * * * * * * Small footprint due to a small and thin package High-speed switching Small g...
Description Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?H)
Field Effect Transistor Silicon N-Channel MOS Type (U-MOS楼碌-H)

File Size 146.68K  /  7 Page

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    TPC8A03-H

Toshiba Semiconductor
Part No. TPC8A03-H
OCR Text h 2010-01-19 1 toshiba field effect transistor wi th built-in schottky barrier diode silicon n-channel mos type (u-mos v-h) tpc8a03-h ...m (typ.) ? high forward transfer admittance: |y fs | = 54 s (typ.) ? low leakage current: i ...
Description TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode

File Size 219.82K  /  8 Page

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    TPCP8103-H

Toshiba Semiconductor
Part No. TPCP8103-H
OCR Text h 2007-06-22 1 toshiba field effect transistor silicon p channel mos type (ultra high speed u-mos iii) tpcp8103-h high efficienc...m ? (typ.) ? high forward transfer admittance: |y fs | = 10 s (typ.) ? low leakage current: i d...
Description Field Effect Transistor Silicon MOS Type

File Size 228.84K  /  4 Page

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