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  gium nitride 28v 200w rf power Datasheet PDF File

For gium nitride 28v 200w rf power Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    NPT1007 NPT1007-15

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
List of Unclassifed Man...
Part No. NPT1007 NPT1007-15
Description Gallium nitride 28v, 200w rf power Transistor

File Size 1,009.25K  /  7 Page

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    CREE power
Part No. W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

File Size 273.34K  /  17 Page

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    Mospec Semiconductor, Corp.
MOSPEC[Mospec Semiconductor]
Part No. 2SA1216
Description power TRANSISTORS(17A,180V,200w) 功率晶体管(7A80V,功00W
power TRANSISTORS(17A/180V/200w)
power TRANSISTORS(17A180V200w)

File Size 116.95K  /  3 Page

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    LRB2400H LRB2400N LRB2400V LRB2400X

RCD COMPONENTS INC.
Part No. LRB2400H LRB2400N LRB2400V LRB2400X
Description HIGH power 隆庐LOAD RESISTOR BOX隆炉 200w to 8000 WATT
HIGH power ‘LOAD RESISTOR BOX 200w to 8000 WATT

File Size 47.64K  /  1 Page

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    NPTB00004

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
Part No. NPTB00004
Description Gallium nitride 28v, 5W rf power Transistor

File Size 944.68K  /  10 Page

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    NPT1012 NPT1012-15

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
Part No. NPT1012 NPT1012-15
Description Gallium nitride 28v, 25W rf power Transistor

File Size 1,010.53K  /  8 Page

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    NPTB00050 NPTB00050-15

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
Part No. NPTB00050 NPTB00050-15
Description Gallium nitride 28v, 50W rf power Transistor

File Size 500.84K  /  8 Page

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    M/A-COM Technology Solution...
Part No. NPT35015
Description Gallium nitride 28v, 18W rf power Transistor

File Size 707.79K  /  10 Page

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    M/A-COM Technology Solution...
Part No. NPT35050A
Description Gallium nitride 28v, 65W rf power Transistor

File Size 664.23K  /  10 Page

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    NPTB00025

M/A-COM Technology Solutions, Inc.
Part No. NPTB00025
Description Gallium nitride 28v, 25W rf power Transistor

File Size 673.67K  /  6 Page

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For gium nitride 28v 200w rf power Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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