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  fet-30v Datasheet PDF File

For fet-30v Found Datasheets File :: 2498    Search Time::6.812ms    
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    2SK2764-01R

FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
Part No. 2SK2764-01R
OCR Text ...valanche Rated N-channel MOS-FET 800V 4 4A 80W > Outline Drawing > Applications Switching Regulators UPS DC-DC converter...30V VDS=0V ID=2A VGS=10V ID=2A VDS=25V VDS=25V VGS=0V f=1MHz VCC=600V ID=4A VGS=10V RGS=10 Tch=25C ...
Description N-channel MOS-FET

File Size 292.33K  /  2 Page

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    IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
OCR Text ...ver Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity Benefits l Ult...30V RDS(on) max 9.0m ID 90A TO-220AB IRF3709 D2Pak IRF3709S TO-262 IRF3709L Para...
Description Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET(减振钢板基本\u003d 30V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 90A型?
Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??

File Size 120.60K  /  11 Page

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    IRF7807D1

International Rectifier
Part No. IRF7807D1
OCR Text ...urrent* Total Gate Charge Synch FET* Total Gate Charge Control FET* Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Charge* (Qgs2 + Qgd) Output Charge* Gate Resistance IGSS Qgsync Qgcont Qgs1 Qgs2 Qgd Q...
Description MOSFET / SCHOTTKY DIODE

File Size 162.75K  /  8 Page

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    IRF7807D2

International Rectifier
Part No. IRF7807D2
OCR Text ...urrent* Total Gate Charge Synch FET* Total Gate Charge Control FET* Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Charge* (Qgs2 + Qgd) Output Charge* Gate Resistance IGSS Qgsync Qgcont Qgs1 Qgs2 Qgd Q...
Description MOSFET / SCHOTTKY DIODE

File Size 131.40K  /  8 Page

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    IRF7807 IRF7807A IRF7807ATR IRF7807TR

IRF[International Rectifier]
Part No. IRF7807 IRF7807A IRF7807ATR IRF7807TR
OCR Text ...n for DC/DC Converters Control FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on)...
Description 8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
Chip-Set for DC-DC Converters
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 238.61K  /  8 Page

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    IRF7811A IRF7809A IRF7811ATR

International Rectifier
Part No. IRF7811A IRF7809A IRF7811ATR
OCR Text ...Cdv/dt immunity for synchronous FET applications. The IRF7811A offers an extremely low combination of Qsw & RDS(on) for reduced losses in co...30V 8.5 m 73 nC 22.5 nC 30 nC IRF7811A 28V 12 m 23 nC 7 nC 31 nC Absolute Maximum Ratings Paramet...
Description PROVISIONAL DATASHEET
Chipset for DC-DC Converters
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 124.48K  /  4 Page

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    TLP250

Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. TLP250
OCR Text ...ionor IGBT Gate Drive Power MOS FET Gate Drive The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a integrated photodetector....30V (*1) IF = 10 mA V8-6 = 4V IF = 0 V6-5 = 2.5V -0.5 0.5 11 0.8 10 VS = 0 , f = 1MHz Ta = 25...
Description TRANSISTOR INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE

File Size 149.25K  /  8 Page

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    2SJ163

PANASONIC[Panasonic Semiconductor]
Part No. 2SJ163
OCR Text FET For general switching Complementary to 2SK1103 0.650.15 +0.2 unit: mm 0.650.15 2.8 -0.3 1.5 -0.05 +0.25 s Features 2...30V, VDS = 0 IG = 10A, VDS = 0 VDS = -10V, ID = -10A VDS = -10V, ID = -1mA, f = 1kHz VDS = -10mV, VG...
Description Silicon P-Channel Junction FET

File Size 30.72K  /  2 Page

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    2SJ164

PANASONIC[Panasonic Semiconductor]
Part No. 2SJ164
OCR Text FET For switching Complementary to 2SK1104 s Features q Low ON-resistance q Low-noise characteristics unit: mm 4.00.2 3.00.2 0.70.1 ...30V, VDS = 0 IG = 10A, VDS = 0 VDS = -10V, ID = -10A VDS = -10V, ID = -1mA, f = 1kHz VDS = -10mV, VG...
Description Silicon P-Channel Junction FET

File Size 30.13K  /  2 Page

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    2SJ172

HITACHI[Hitachi Semiconductor]
Part No. 2SJ172
OCR Text FET November 1996 Application High speed power switching Features * * * * Low on-resistance High speed switching Low drive current 4...30V -100 0 20 60 80 40 Gate Charge Qg (nc) -20 100 -0.5 -1.0 -2 -5 -10 Drain Current ID (A)...
Description Silicon P-Channel MOS FET

File Size 41.90K  /  7 Page

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