drain current id 2 4a tc25c pdf Datasheet P1 Description --- IC-ON-LINE


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drain current id 2 4a tc25c Datasheet PDF File

For drain current id 2 4a tc25c Found Datasheets File :: 150+ Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				TY Semiconductor Co., Ltd
Part No.	KRF7805Z
Description	Continuous drain current, VGS 10V, Ta = 25 A Pulsed drain current idM 120 A
File Size	186.45K / 2 Page	View it Online	Download Datasheet

				Philips
Part No.	PNP3055E
Description	PowerMOS transistor. drain-source voltage 60 V. drain current(DC) 12 A.
File Size	66.23K / 7 Page	View it Online	Download Datasheet

				General Electric Solid State
Part No.	IRF132
Description	N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 100V. Continuous drain current 48A.
File Size	160.91K / 5 Page	View it Online	Download Datasheet

				General Electric Solid State
Part No.	IRF452
Description	N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A.
File Size	191.64K / 5 Page	View it Online	Download Datasheet

				ST Microelectronics SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
Part No.	HCF4000 HCF4000B HCF4001 HCF4001B HCF4002 HCF4002B HCC4001 HCC4001B HCC_HCF4001B HCF4025BM1 HCC_HCF4025B HCF4025BEY HCC4000 HCC4000B HCC4000BF HCC4001BF HCC4002 HCC4002B HCC4002BF HCC4025 HCC4025B HCC4025BF HCF4000BC1 HCF4000BEY HCF4000BM1 HCF4001BC1 HCF4001BEY HCF4001BM1 HCF4002BC1 HCF4002BEY HCF4002BM1 HCF4025 HCF4025B HCF4025BC1 HCC4002B-4025B HCF4002B-4025B HCF4000B-4001B HCC4000B-4001B FXXXXBM1 HCCXXXXBF 4000B 4002B
Description	NOR GATE (289.19 k) TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,6A I(D),TO-3 RoHS Compliant: Yes T-PNP-SI-AF PO- .75W T-NPN- SI-PO & SW-PD 40 W 或非 MOSFET-PWR N-CH HI SPEED 或非 MOSFET; Transistor Polarity:P Channel; Continuous drain current, id:10.5A; On-Resistance, Rds(on):0.3ohm; Package/Case:3-TO-220; Continuous drain current - 100 Deg C:7.5A; Continuous drain current - 25 Deg C:10.5A 或非 MOSFET-PWR 800V 4a 或非 NOR GATE 或非 MOSFET-PWR 500V 8A
File Size	288.46K / 13 Page	View it Online	Download Datasheet

				Advanced Linear Devices, Inc.
Part No.	AM29LV017D-120WCI AM29LV017D-120EC AM29LV017D-120WCC AM29LV017D-90FC AM29LV017D-90EI AM29LV017D-120EI
Description	MOSFET; drain Source Voltage, Vds:20V; Continuous drain current, id:93A; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:No; Package/Case:DPAK; Peak Reflow Compatible (260 C):No RoHS Compliant: No MOSFET; drain Source Voltage, Vds:20V; Continuous drain current, id:93A; On-Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Continuous drain current - 100 Deg C:66A; Continuous drain current - 25 Deg C:93A RoHS Compliant: Yes x8 Flash EEPROM 20V Single N-Channel HEXFET Power MOSFET in a I-Pak package 20V Single N-Channel HEXFET Power MOSFET in a D-Pak package x8闪存EEPROM
File Size	640.33K / 44 Page	View it Online	Download Datasheet

				MITSUMI ELECTRIC CO LTD ETC[ETC] Mitsumi Electronics, Corp.
Part No.	PST993 PST993C PST993D PST993E PST993F PST993G PST993H PST993I PST993J PST993K PST993L PST994 PST994C PST994D PST994E PST994F PST994G PST994H PST994I PST994J PST994K PST994L
Description	MOSFET; Transistor Polarity:P Channel; drain Source Voltage, Vds:-20V; Continuous drain current, id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No MOSFET, P, SOT-23; Transistor type:MOSFET; current, id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); current, id max:2.2A; current, idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes MOSFET; Transistor Polarity:N Channel; drain Source Voltage, Vds:20V; Continuous drain current, id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No System Reset
File Size	93.95K / 4 Page	View it Online	Download Datasheet

				General Electric Solid State GE Solid State
Part No.	IRFF120 IRFF121 IRFF122 IRFF123
Description	N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 60V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 100V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 50V. Continuous drain current 6.0A. N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
File Size	161.85K / 5 Page	View it Online	Download Datasheet

				General Electric Solid State GE Solid State
Part No.	IRFF110 IRFF111 IRFF112 IRFF113
Description	N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 100V. Continuous drain current 3.0A. N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 60V. Continuous drain current 3.0A. Power MOS Field-Effect Transistors N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 60V. Continuous drain current 3.5A.
File Size	173.01K / 5 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HCS04MS FN3046 HCS04D HCS04DMSR HCS04HMSR HCS04K HCS04KMSR
Description	From old datasheet system Radiation Hardened Hex Inverter JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage drain current Min, idss:0.5mA; Zero Gate Voltage drain current Max, idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V
File Size	103.81K / 8 Page	View it Online	Download Datasheet

For drain current id 2 4a tc25c Found Datasheets File :: 150+ Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |