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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT77N60JC3
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| OCR Text |
77a 0.035
Super Junction MOSFET
C OLMOS O
Power Semiconductors
S G D
S
SO
2 T-
27
* Ultra low RDS(ON) * Ultra Low Gate Charge, Qg * Popular SOT-227 Package
* Low Miller Capacitance * Avalanche Energy Rated * N-Cha... |
| Description |
Power MOSFET; Package: ISOTOP®; ID (A): 77; RDS(on) (Ohms): 0.035; BVDSS (V): 600;
Super Junction MOSFET
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| File Size |
256.87K /
5 Page |
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it Online |
Download Datasheet
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Advanced Power Technology Ltd.
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| Part No. |
APT77N60JC3
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| OCR Text |
...ot-227 package apt77n60jc3 600v 77a 0.035 ? ? ? ? ? characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 500a) drain-source on-state resistance 2 (v gs = 10v, i d = 60a) zero gate voltage drain curr... |
| Description |
Super Junction MOSFET
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| File Size |
175.79K /
5 Page |
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it Online |
Download Datasheet |
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MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
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| Part No. |
APT77N60JC3
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| OCR Text |
77a 0.035
Super Junction MOSFET
C OLMOS O
Power Semiconductors
S G D
S
SO
2 T-
27
* Ultra low RDS(ON) * Low Miller Capacitance * Ultra Low Gate Charge, Qg * Avalanche Energy Rated * N-Channel Enhancement Mode * Popul... |
| Description |
77 A, 600 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
Super Junction MOSFET
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| File Size |
175.65K /
5 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT55M50JFLL
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| OCR Text |
77a
S G D
0.050
S
POWER MOS 7
(R)
R
FREDFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by s... |
| Description |
POWER MOS 7 FREDFET
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| File Size |
166.62K /
5 Page |
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it Online |
Download Datasheet |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT50M60L2VR_04 APT50M60L2VR APT50M60L2VR04
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| OCR Text |
77a 0.060
POWER MOS V(R) MOSFET
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power ... |
| Description |
77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V㈢ MOSFET
POWER MOS V? MOSFET
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| File Size |
156.31K /
5 Page |
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it Online |
Download Datasheet |
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MICROSEMI POWER PRODUCTS GROUP
MICROSEMI[Microsemi Corporation]
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| Part No. |
APT50M60L2VFR_04 APT50M60L2VFR APT50M60L2VFR04 APT50M60L2VFRG
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| OCR Text |
77a
0.060
POWER MOS V(R) FREDFET
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Powe... |
| Description |
77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V㈢ FREDFET
POWER MOS V? FREDFET
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| File Size |
157.20K /
5 Page |
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it Online |
Download Datasheet |
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Infineon
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| Part No. |
SPB77N06S2-12
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| OCR Text |
... mj reverse diode d v /d t i s =77a, v ds =44v, d i /d t =200a/s, t jmax =175c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t c =25c p tot 140 w operating and storage temperature t j , t st g -55... +175 c iec clima... |
| Description |
N-Channel OptiMOS Power Transistor
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| File Size |
516.13K /
8 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
PSMN8R0-40BS
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| OCR Text |
...25c; v gs =10v; see figure 1 --77a p tot total power dissipation t mb =25c; see figure 2 --86w static characteristics r dson drain-source on-state resistance v gs =10v; i d =25a; t j =25c; see figure 13 -6.27.6m ? dynamic characteristic... |
| Description |
N-channel 40 V 7.6 m standard level MOSFET in D2PAK
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| File Size |
197.90K /
14 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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