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ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
2n6039 2N6036 2N6036_00
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| OCR Text |
2n6039
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
s
s s
2N6036 IS A STMicroelectronics PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
APPLICATIONS GENERAL PURPOSE SWI... |
| Description |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
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| File Size |
242.50K /
6 Page |
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ONSEMI[ON Semiconductor]
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| Part No. |
2n6039 2N6035 2N6036 2N6038 2N6035-D
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| OCR Text |
...tions.
2N6035 2N6036* 2N6038 2n6039 *
*ON Semiconductor Preferred Device
NPN
* High DC Current Gain -- * Collector-Emitter Sustaining Voltage -- @ 100 mAdc * * *
VCEO(sus) = 60 Vdc (Min) -- 2N6035, 2N6038 = 80 Vdc (Min) -- 2N6036... |
| Description |
Plastic Darlington Complementary Silicon Power Transistors
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| File Size |
109.31K /
8 Page |
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it Online |
Download Datasheet |
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ON Semi
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| Part No. |
2N6035 2n6039 2N6038 ON0073
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| OCR Text |
...(sus) = 80 Vdc (Min) -- 2N6036, 2n6039 * Forward Biased Second Breakdown Current Capability IS/b = 1.5 Adc @ 25 Vdc * Monolithic Construction with Built-In Base-Emitter Resistors to Limit Leakage Multiplication * Space-Saving High Performan... |
| Description |
60, 80 VOLTS 40 WATTS
From old datasheet system
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| File Size |
243.44K /
6 Page |
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it Online |
Download Datasheet |
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Littelfuse, Inc.
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| Part No. |
2N6035/D
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| OCR Text |
...2n6038 = 80 vdc (min) e 2n6036, 2n6039 ? forward biased second breakdown current capability i s/b = 1.5 adc @ 25 vdc ? monolithic construction with builtin baseemitter resistors to limit e leakage multiplication ? spacesaving high perform... |
| Description |
Plastic Darlington Silicon Power Transistors 塑料达林顿硅功率晶体
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| File Size |
110.05K /
8 Page |
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it Online |
Download Datasheet |
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