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SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
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| Part No. |
M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M470T6554CZ0-D5 M470T3354CZ0-CC M470T6554CZ0-CC M470T2953CZ0-CD6 M470T6554CZ0-CD6 M470T3354CZ0-CD6 M470T3354CZ0-LD6 M470T2953CZ0-D5 M470T6554CZ0-LD6
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| OCR Text |
1gb unbuffered sodimms ddr2 sdram ddr2 unbuffered sodimm revision 1.1 march 2005 200pin unbuffered sodimm based on 512mb c-die 64bit non-ecc
rev. 1.1 mar. 2005 256mb, 512mb, 1gb unbuffered sodimms ddr2 sdram ddr2 unbuffered sodimm order... |
| Description |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
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| File Size |
271.87K /
20 Page |
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| Part No. |
MT8VDDT1664HDG-335XX
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| OCR Text |
1gb (x64, dr): 200-pin ddr sodimm features pdf: 09005aef80765fab/source: 09005aef806e1d28 micron technology, inc., reserves the right to cha...512mb mt8vddt12864hd ? 1gb 2 for component data sheets, refer to micron?s web site: www.micron.com ... |
| Description |
16M X 64 DDR DRAM MODULE, 0.75 ns, ZMA200
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| File Size |
490.71K /
14 Page |
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Download Datasheet |
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| Part No. |
M312L5720CZ0-CA2
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| OCR Text |
1gb, 2gb registered dimm rev. 0.0 sept ember, 2004 preliminary ddr sdram registered module 184pin registered module based on 512mb c-die with 72-bit ecc revision 0.0 september. 2004 66 tsop-ii and 60 ball fbga with pb-free (rohs comp... |
| Description |
256M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
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| File Size |
576.56K /
28 Page |
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it Online |
Download Datasheet |
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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
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| Part No. |
M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554BG3-CD5_CC M470T6554BGZ0-CD5_CC M470T6554BGZ3-CD5_CC M470T6554BZ0-LD5_CC M470T6554BZ3-LD5_CC M470T2953BY0-LD5_CC M470T3354BG0-CD5_CC M470T3354BG3-CD5_CC M470T3354BGZ0-CD5_CC M470T3354BGZ3-CD5_CC M470T2953BSY3-CD5_CC M470T3354BZ0-LD5_CC M470T3354BZ3-LD5_CC M470T2953BY3-LD5_CC M470T2953BS3-CD5_CC M470T2953BSY0-CD5_CC M470T2953BXX M470T2953BY0 M470T2953BY0-LD5/CC M470T3354BZ0-LD5/CC M470T6554BZ0-LD5/CC M470T2953BS0-CD5/CC M470T3354BG0-CD5/CC M470T6554BG0-CD5/CC M470T3354BZ3-LD5/CC M470T2953BY3-LD5/CC M470T6554BZ3-LD5/CC M470T3354BG3-CD5/CC M470T6554BG3-CD5/CC M470T2953BSY0-CD5/CC M470T2953BSY3-CD5/CC M470T2953BS3-CD5/CC M470T3354BGZ0-CD5/CC M470T3354BGZ3-CD5/CC M470T6554BGZ3-CD5/CC M470T6554BGZ0-CD5/CC
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| OCR Text |
1gb Unbuffered SODIMMs
DDR2 SDRAM
DDR2 Unbuffered SODIMM
200pin Unbuffered SODIMM based on 512mb B-die 64bit Non-ECC
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE... |
| Description |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
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| File Size |
325.20K /
19 Page |
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it Online |
Download Datasheet |
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| Part No. |
MT8VDDT3264HDG-265A1 MT8VDDT3264HDG-262XX
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| OCR Text |
...reserved. 128mb, 256mb, 512mb, 1gb (x64, dr) 200-pin ddr sodimm ddr sdram small- outline dimm mt8vddt1664hd ? 128mb mt8vddt3264hd ? 256mb mt8vddt6464hd ? 512mb mt8vddt12864hd ? 1gb (advance ? ) for the latest data sheet, please refer to ... |
| Description |
32M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
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| File Size |
586.18K /
32 Page |
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it Online |
Download Datasheet |
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