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Hirose Electric
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| Part No. |
AT-100V
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| OCR Text |
... ?c) attenuation (db) at - 100v sma dc - 18 2 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 20 ? features 1. sma connector type 2. excellent high frequency characteristics 3. stable performance under the conditi... |
| Description |
Fixed Attenuators Up to 2 W Power
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| File Size |
113.03K /
1 Page |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
100V 22GQ100 30A
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| OCR Text |
100V
Major Ratings and Characteristics Characteristics IIF(AV) Rectangular waveform VRRM IFSM @ tp = 8.3ms half-sine VF @ 30Apk, TJ =125C 22GQ100 30 100 400 0.90 Units A V A V C
Description/Features The 22GQ100 Schottky rectifier has ... |
| Description |
SCHOTTKY RECTIFIER 肖特基整流器
From old datasheet system
30V 100A Hi-Rel Schottky Discrete Diode in a TO-254AA package
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| File Size |
311.37K /
4 Page |
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Panasonic, Corp.
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| Part No. |
JVN1AF-100V JVN1A-100V
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| OCR Text |
...?0 to 60 c ?0 to 140 f (dc 100v) humidity: 5 to 85 % r.h. (note freezing and condensing at low temperature) air pressure: 86 to 106 kpa shock resistance functional min. 200 m/s 2 {20g}* 5 destructive min. 1,000 m/s 2 {100g}* 6 vibra... |
| Description |
Flat Power Relay, 1 Form A, 16A 125VDC, Flux Resistant POWER/SIGNAL RELAY, SPST, MOMENTARY, 0.006A (COIL), 100VDC (COIL), 600mW (COIL), 10A (CONTACT), 30VDC (CONTACT), THROUGH HOLE-STRAIGHT MOUNT
Flat Power Relay, 1 Form A, 16A 125VDC POWER/SIGNAL RELAY, SPST, MOMENTARY, 0.006A (COIL), 100VDC (COIL), 600mW (COIL), 10A (CONTACT), 30VDC (CONTACT), THROUGH HOLE-STRAIGHT MOUNT
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| File Size |
90.42K /
2 Page |
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IXYS CORP
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| Part No. |
IXTH16N10D2
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| OCR Text |
...16n10d2 ixtt16n10d2 v dsx = 100v i d(on) > 16a r ds(on) 64m features ? normally on mode ? international standard packages ? molding epoxies meet ul 94 v-0 flammability classification advantages ? easy to... |
| Description |
0.064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
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| File Size |
167.39K /
5 Page |
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TY Semiconductor Co., Ltd
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| Part No. |
AOB12T60P
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| OCR Text |
...time related i v gs =0v, v ds =100v, f=1mhz v gs =0v, v ds =0 to 480v, f=1mhz v ds =0v, v gs =30v gate-body leakage current v gs =10v, v ds =480v, i d =12a total gate charge gate source charge switching parameters i d =250a, v gs =0v, t j ... |
| Description |
Trench Power AlphaMOS-II technology
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| File Size |
1,081.98K /
6 Page |
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it Online |
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Price and Availability
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