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  1.8v 10a Datasheet PDF File

For 1.8v 10a Found Datasheets File :: 4995    Search Time::1.297ms    
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    2SC4835

PANASONIC[Panasonic Semiconductor]
Part No. 2SC4835
OCR Text 1 s Features q q q q 0.425 1.250.1 0.425 Low noise figure NF. High gain. High transition frequency fT. S-Mini type package, ...8V, IC = 20mA* VCE = 8V, IC = 15mA, f = 800MHz VCB = 10V, IE = 0, f = 1MHz VCE = 8V, IC = 15mA, f = ...
Description Silicon NPN epitaxial planer type(For UHF band low-noise amplification)

File Size 36.52K  /  2 Page

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    2SC5019

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5019
OCR Text 1 4.50.1 1.60.2 1.50.1 q q q q Low noise figure NF. High gain. High transition frequency fT. Mini Power type package, allowing d...8V, IC = 20mA VCE = 8V, IC = 20mA, f = 800MHz VCB = 10V, IE = 0, f = 1MHz VCE = 8V, IC = 20mA, f = 8...
Description Silicon NPN epitaxial planer type(For UHF band low-noise amplification)

File Size 37.02K  /  2 Page

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    CD4043BMS CD4043BMSH CD4044BMS CD4044BMSH FN3311 CD4044

INTERSIL[Intersil Corporation]
Part No. CD4043BMS CD4043BMSH CD4044BMS CD4044BMSH FN3311 CD4044
OCR Text ... `B' Series CMOS Devices" Q4 1 Q1 2 R1 3 S1 4 ENABLE 5 S2 6 R2 7 VSS 8 16 VDD 15 R4 14 S4 13 NC 12 S3 11 R3 10 Q3 9 Q2 NC = NO CONN...8V, VIN = VDD or GND VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or ...
Description Single 100Mbps Digital Isolator with Enable 8-SOIC -40 to 125
CMOS Quad Clocked “DLatch
R/S Latches, Tri-State, Quad, Rad-Hard, CMOS, Logic
CMOS Quad Clocked “D” Latch
From old datasheet system
CMOS Quad 3 State R/S Latches
CMOS Quad Clocked D Latch
CMOS Quad Clocked “D Latch

File Size 108.99K  /  10 Page

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    FS7KM-12

Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS7KM-12
OCR Text ... 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 123 2.6 0.2 w VD...8V DRAIN CURRENT ID (A) 20 10 PD = 35W 8 DRAIN CURRENT ID (A) 16 TC = 25C Pulse Test 12...
Description HIGH-SPEED SWITCHING USE

File Size 44.52K  /  4 Page

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    IRF3706 IRF3706L IRF3706S

IRF[International Rectifier]
Part No. IRF3706 IRF3706L IRF3706S
OCR Text ...Typ. --- 0.50 --- --- Max. 1.7 --- 62 40 Units C/W Notes through are on page 11 www.irf.com 1 7/5/00 IRF3706/3706S/3...8V, ID = 18A --- 2.0 V VDS = VGS, ID = 250A --- 20 VDS = 16V, VGS = 0V A --- 100 VDS = 16V, VGS = 0...
Description Power MOSFET(Vdss=20V/ Rds(on)max=8.5mohm/ Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=8.5mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=8.5mohm Id=77A)

File Size 143.52K  /  11 Page

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    IRF3708 IRF3708L IRF3708S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3708 IRF3708L IRF3708S
OCR Text ...Typ. --- 0.50 --- --- Max. 1.73 --- 62 40 Units C/W * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended fo...8V, ID = 7.5A VDS = VGS, ID = 250A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 12V VGS...
Description Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET(减振钢板基本\u003d 30V的,的Rdson)最大值\u003d 12mohm,身份证\u003d 62A条)
Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)

File Size 137.00K  /  10 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...0 -16 11 -5.8 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to...8V 16 C, C apacitanc e (pF ) 12 8 C rss 500 4 0 1 10 100 A 0 0 10 20 30 ...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...0 -16 11 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJ...8V 16 C, C apacitanc e (pF ) 12 8 C rss 500 4 0 1 10 100 A 0 0 10 20 30 ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text ...GE) SOURCE (PIN 2) GATE (PIN 1) 5-20 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Pr...8V VGS = 7V 100s 10 OPERATION IN THIS AREA IS LIMITED BY rDS(ON) TC = 25oC TJ = MAX RATED SINGLE ...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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    IRF9540 RF1S9540SM FN2282

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. IRF9540 RF1S9540SM FN2282
OCR Text ...SM -100 -100 -19 -12 -76 20 150 1 960 -55 to 175 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Voltage (Note 1) . . . . ....8V -20 VGS = -5V 0 0 -10 -20 VGS = -7V VGS = -6V -30 VGS = -4V -40 -50 1 VDS, DRAIN TO SOURCE ...
Description 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs
From old datasheet system

File Size 59.17K  /  7 Page

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