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  0.16 0.25a Datasheet PDF File

For 0.16 0.25a Found Datasheets File :: 6647    Search Time::1.969ms    
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    2SA608 2SA608N 2SC536N

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA608 2SA608N 2SC536N
OCR Text ...current capacity and wide ASO. 0.45 3.5 1.4max 0.6 1.27 4.0max 13.7 14.0 0.5 0.45 4.5 0.44 1 2.5 2 2.5 ...16 IC -- VCE A --50 A --45 A --40 A --35 2SA608N Collector Current, IC - mA 20 IC -- VCE...
Description    Low-Frequency General-Purpose Amplifier Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier Applications
NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier Applications

File Size 39.56K  /  4 Page

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    2SA921

PANASONIC[Panasonic Semiconductor]
Part No. 2SA921
OCR Text ...50.5 5.10.2 s Features 0.45 -0.1 1.27 +0.2 0.45 -0.1 1.27 +0.2 123 2.30.2 2.540.15 1:Emitter 2:Collector 3:Ba...16 -35A -30A -12 -25A -20A -8 -15A -10A -4 -5A 0 0 40 80 120 160 200 0 -2 -4 -6 -8 -10 -12 0 0 - 0.4...
Description Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

File Size 36.24K  /  2 Page

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    2SB1036

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1036
OCR Text ... 4.00.2 s Features q q q 0.70.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitt...16 -40A -35A -12 -30A -25A -8 -20A -15A -4 -10A -5A 0 350 300 250 200 150 100 50 0 0 20 40 60 80 ...
Description Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification)

File Size 36.41K  /  2 Page

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    2SB946 2SD1271

PANASONIC[Panasonic Semiconductor]
Part No. 2SB946 2SD1271
OCR Text 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 Unit: mm 4.20.2 s Features q q q q Low collector to emitter saturation voltage VCE(sat) Satis...16.70.3 3.10.1 4.0 1.40.1 1.30.2 Solder Dip s Absolute Maximum Ratings Parameter ...
Description Silicon PNP epitaxial planar type(For power switching)

File Size 54.24K  /  3 Page

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    2SD958

PANASONIC[Panasonic Semiconductor]
Part No. 2SD958
OCR Text ...omplementary to 2SB788 6.90.1 0.4 Unit: mm 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 s Features q q q 1.5 1.5 R0.9 R0.9 0.85...16 300 35A 30A 12 25A 8 20A 15A 4 10A 5A 200 100 0 0 20 40 60 80 100 120 140 160 ...
Description Silicon NPN epitaxial planer type(For high breakdown voltage and low-noise amplification)

File Size 36.40K  /  2 Page

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    IRF1310S

IRF[International Rectifier]
Part No. IRF1310S
OCR Text ...ation. VDSS = 100V RDS(on) = 0.04 ID = 41A SMD-220 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 2...16 C, Capacitance (pF) 3 00 0 Ciss 12 2 00 0 Coss 1 00 0 8 GS 4 Crss ...
Description Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

File Size 319.11K  /  8 Page

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    IRF3205L IRF3205S IRF3205

IRF[International Rectifier]
Part No. IRF3205L IRF3205S IRF3205
OCR Text ...10 80 390 200 1.3 20 62 20 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C Thermal Resistan...16 14 12 10 8 6 4 2 0 ID = 62A V DS= 44V V DS= 27V V DS= 11V C, Capacitance(pF) 4000 Cis...
Description Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)

File Size 144.83K  /  10 Page

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    IRF3205 IRF3205PBF

IRF[International Rectifier]
Part No. IRF3205 IRF3205PBF
OCR Text ...10 80 390 200 1.3 20 62 20 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C Thermal Resistan...16 14 12 10 8 6 4 2 0 ID = 62A V DS= 44V V DS= 27V V DS= 11V C, Capacitance(pF) 4000 Cis...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)

File Size 91.40K  /  8 Page

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    IRF3515L IRF3515S

IRF[International Rectifier]
Part No. IRF3515L IRF3515S
OCR Text ...l VDSS 150V RDS(on) max 0.045 ID 41A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanc...16 C, Capacitance(pF) 10000 12 Ciss 1000 8 Coss Crss 100 1 10 100 4 0 0 20...
Description Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A)
Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)

File Size 122.87K  /  10 Page

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    IRF360 IRF360-15

IRF[International Rectifier]
Part No. IRF360 IRF360-15
OCR Text ...umber BVDSS RDS(on) IRF360 400V 0.20 ID 25A IRF360 400V, N-CHANNEL The HEXFETtechnology is the key to International Rectifier's ad...16 100 300 2.4 20 980 25 30 4.0 -55 to 150 300 (0.063 in. (1.6mm) from case for 10s) 11.5(typical) ...
Description Repetitive Avalanche Ratings
TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=0.20ohm/ Id=25A)
TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A)
400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package

File Size 138.60K  /  7 Page

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