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TOSHIBA[Toshiba Semiconductor]
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Part No. |
2SK3880
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OCR Text |
MOSIV)
2SK3880
Switching Regulator Applications
* * * * Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.) Low leakage current: IDSS = 100A (max) (VDS = 640 V) Enhancement mode... |
Description |
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Field Effect Transistor / Silicon N-Channel MOS Type
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File Size |
253.97K /
6 Page |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
2SK3798
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OCR Text |
MOSIV)
2SK3798
Switching Regulator Applications
* * * * Low drain-source ON resistance: RDS (ON) = 2.5 (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V) Enhancement-mode: Vth ... |
Description |
Silicon N Channel MOS Type Switching Regulator Applications
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File Size |
219.08K /
6 Page |
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it Online |
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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Part No. |
2SK3799
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OCR Text |
MOSIV)
2SK3799
Switching Regulator Applications
Low drain-source ON resistance High forward transfer admittance : RDS (ON) = 1.0 (typ.) : |Yfs| = 6.0 S (typ.) Unit: mm
Low leakage current : IDSS = 100A (max) (VDS = 720 V) Enhanceme... |
Description |
Silicon N-Channel MOS Type Switching Regulator Applications
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File Size |
218.06K /
6 Page |
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it Online |
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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Part No. |
TPCP8J01
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OCR Text |
MOSIV) Silicon NPN Epitaxial Type
TPCP8J01
Notebook PC Applications Portable Equipment Applications
0.330.05
Unit: mm
0.05 M A
8 5
* * * * * *
Lead(Pb)-Free Small mounting area due to small and thin package Low drain-source ... |
Description |
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-mosiv) Silicon NPN Epitaxial Type TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-mosiv) /Silicon NPN Epitaxial Type MOSFET TPC Series
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File Size |
186.00K /
5 Page |
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