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Advanced Power Electronics
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| Part No. |
AP75N07GP-HF-3
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| OCR Text |
...ge current (t j = 125c ) v ds =60v , v gs =0v - - 250 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate c...3.starting t j =25 o c , v dd =50v , l=1mh , r g =25w , i as =30a. 4.package limitation current is ... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
115.81K /
6 Page |
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Bussmann
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| Part No. |
JJS-60V
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| OCR Text |
...NT IN AMPERES
JJS-30V
JJS-60V
47.88 1.885 5.08 MIN. .200 19.05 .76 .750 .030
1.562"
20.19 .76 .795 .030
.150" (+ .020 - .000) .806" ( .020)
8.23 .324
The only controlled copy of this BIF document is the electroni... |
| Description |
(JJS Series) T-Tron Very Fast Acting Fuses
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| File Size |
179.57K /
2 Page |
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it Online |
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Advanced Power Electronics
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| Part No. |
AP9973GS-3
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| OCR Text |
...n-source leakage current v ds =60v, v gs =0v - - 10 ua drain-source leakage current (t j =125 o c) v ds =48v ,v gs =0v -...3 - nc q gd gate-drain ("miller") charge v gs =4.5v - 4 - nc t d(on) ... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
330.34K /
6 Page |
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it Online |
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Advanced Power Electronics
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| Part No. |
AP80T10GP-HF-3
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| OCR Text |
...ltage (v) v ds =50v v ds =60v v ds =80v i d =40a 0 2000 4000 6000 8000 10000 1 5 9 1 31 72 12 52 9 v ds ,drain-to-sourc...3 ?2011 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-220 marking i... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
77.63K /
5 Page |
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it Online |
Download Datasheet |
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