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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
AN3100
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| OCR Text |
...SIGN METHODS
Freescale's InGaP hbts are designed using one of two different circuit methods. The low power GPAs (P1dB from 12 to 24 dBm) are designed using a Darlington Pair (Fig. 1). The Darlington Pair is biased when voltage is applied t... |
| Description |
General Purpose Amplifier Biasing
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| File Size |
60.19K /
4 Page |
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SEOUL[Seoul Semiconductor]
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| Part No. |
SSC-hbts901
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| OCR Text |
...ed of the following characters; hbts - Year ( 3 for 2003, 4 for 2004, 5 for 2005 ) - Month ( 01 for Jan., 02 for Feb.,11 for Nov., 12 for Dec.) - Day ( 01, 02, 03, 04, 28, 29, 30, 31.)
- Number of Tray ( 001, 002, 003, 004, 005, 0... |
| Description |
CHIP LED DEVICE
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| File Size |
360.47K /
10 Page |
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it Online |
Download Datasheet |
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RFMD[RF Micro Devices]
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| Part No. |
TA0012
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| OCR Text |
...available on the reliability of hbts, and may be obtained with the application information package on the RF2123. In order to meet the continuing demand for GaAs HBT, RF Micro Devices has licensed the proprietary TRW HBT process for commerc... |
| Description |
New High Power, High Efficiency HBT GSM Power Amplifier
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| File Size |
73.22K /
4 Page |
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it Online |
Download Datasheet |
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