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NEC Corp.
NEC[NEC]
CEL[California Eastern Labs]
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| Part No. |
NE5510179A-T1 NE5510179A
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| OCR Text |
... NEWMOS technology (NEC's 0.6 m wsi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 29.5 dBm output power with 50% power added efficiency at 1.9 GHz under the 3.5 V supply voltage, or can deliver 29 dBm o... |
| Description |
3.5V的操作硅射频功率MOSFET1.9 GHz的输电功
3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
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| File Size |
38.35K /
4 Page |
 View
it Online |
Download Datasheet
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CEL[California Eastern Labs]
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| Part No. |
NE552R479A-T1A-A NE552R479A
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| OCR Text |
...NEWMOS2 technology (NEC's 0.6 m wsi gate lateral MOSFET) and housed in a surface mount package.
APPLICATIONS
* DIGITAL CELLULAR PHONES: 3.0 V GSM1900 Pre Driver * ANALOG CELLULAR PHONES: 2.4 V AMPS Handsets * OTHERS: W-LAN Short Range... |
| Description |
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
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| File Size |
392.01K /
9 Page |
View
it Online |
Download Datasheet |
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NEC[NEC]
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| Part No. |
NE552R679A-T1A NE552R679A NE552R679A-T1
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| OCR Text |
...ing our NEWMOS2 technology (our wsi gate lateral-diffusion MOS FET) and housed in a surface mount package. This device can deliver 28.0 dBm output power with 60% power added efficiency at 460 MHz under the 3.0 V supply voltage.
FEATURES
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| Description |
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
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| File Size |
59.39K /
9 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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