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SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
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| Part No. |
BGA420 Q62702-G0057
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| OCR Text |
...ing point
RthJS
tbd
K/w
1) TS is measured on the emitter (GND) lead at the soldering point to the pcb Semiconductor Group Semic...lco = CBE = CCB = CCE = C1 = C2 = C3 = L1 = L2 =
0.36 0.4 0.3 0.15 0.36 0.4 95 6 132 28 88 8 0.6 ... |
| Description |
Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 Ω-gain block Unconditionally stable)
Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 ヘ-gain block Unconditionally stable)
From old datasheet system
Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 -gain block Unconditionally stable)
Si-MMIC-Amplifier in SIEGET 25-Technologie
Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 gain block Unconditionally stable)
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| File Size |
36.75K /
6 Page |
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it Online |
Download Datasheet
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INFINEON[Infineon Technologies AG]
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| Part No. |
BGA420
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| OCR Text |
...Unit mA V mw dBm C
410
K/w
1
Jan-29-2002
BGA420
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parame...lco = CBE = CCB = CCE = C1 = C2 = C3 = L1 = L2 =
0.36 0.4 0.3 0.15 0.36 0.4 95 6 132 28 88 8 0.6 ... |
| Description |
Si-MMIC-Amplifier in SIEGET 25-Technologie
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| File Size |
138.97K /
6 Page |
View
it Online |
Download Datasheet |
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Infineon
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| Part No. |
BGA420
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| OCR Text |
...V mw dBm C
RthJS
530
K/w
Oct-12-1999
BGA 420
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter...lco = CBE = CCB = CCE = C1 = C2 = C3 = L1 = L2 =
0.36 0.4 0.3 0.15 0.36 0.4 95 6 132 28 88 8 0.6 ... |
| Description |
Silicon MMICs - 20dB LNA, 0...3GHz, 50Ohm, SOT343
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| File Size |
121.21K /
6 Page |
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it Online |
Download Datasheet |
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