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  vgsoff-10v Datasheet PDF File

For vgsoff-10v Found Datasheets File :: 89    Search Time::2.578ms    
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    Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. TIM5359-8SL
OCR Text ...o Case UNIT mS V A V C/W Gm VGSoff IDSS VGSO Rth(c-c) MIN. -1.0 -5 TYP. 1800 -2.5 5.2 2.5 MAX. -4.0 7.0 3.8 u The information contained herein is presented only as a guide for the applications of our products. No respo...
Description MICROWAVE POWER GaAs FET
From old datasheet system

File Size 84.34K  /  2 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. TIM4450-8SL
OCR Text ...o Case UNIT mS V A V C/W Gm VGSoff IDSS VGSO Rth(c-c) MIN. -1.0 -5 TYP. 1800 -2.5 5.2 2.5 MAX. -4.0 7.0 3.8 u The information contained herein is presented only as a guide for the applications of our products. No respo...
Description    MICROWAVE POWER GaAs FET

File Size 85.65K  /  2 Page

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    TIM1414-30L

Toshiba Semiconductor
Part No. TIM1414-30L
OCR Text ... -2.0 20.0 -4.5 1.1 gm VGSoff IDSS VGSO Rth(c-c) Channel to Case u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringeme...
Description MICROWAVE POWER GaAs FET

File Size 45.53K  /  2 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. TIM3438-16SL
OCR Text ...hermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 5.2A VDS= 3V IDS= 70mA VDS= 3V VGS= 0V IGS= -210A Channel to Case UNIT mS V A V C/W MIN. -1.0 -5 TYP. 3200 -2.5 10 1.4 MAX. -4.0 2.0 ...
Description MICROWAVE POWER GaAs FET

File Size 39.63K  /  2 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. TIM1314-30L
OCR Text ... -2.0 20.0 -4.5 1.1 gm VGSoff IDSS VGSO Rth(c-c) Channel to Case u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringeme...
Description MICROWAVE POWER GaAs FET

File Size 38.03K  /  2 Page

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    TIM5359-80SL

Toshiba Semiconductor
Part No. TIM5359-80SL
OCR Text ...ge Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) (Max.) UNIT S V A V C/W MIN. -1.0 -5 TYP. 20 -1.8 38 0.5 MAX. -3.0 0.6 ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CONDITIONS VDS= 3V IDS= 12.0A VDS= 3V IDS= 200mA VDS= 3V V...
Description IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level

File Size 40.11K  /  2 Page

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    Toshiba Corporation
Part No. TIM4450-8SL
OCR Text ...o Case UNIT mS V A V C/W Gm VGSoff IDSS VGSO Rth(c-c) MIN. -1.0 -5 TYP. 1800 -2.5 5.2 2.5 MAX. -4.0 7.0 3.8 u The information contained herein is presented only as a guide for the applications of our products. No respo...
Description MICROWAVE POWER GaAs FET

File Size 84.43K  /  2 Page

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    TIM5964-35SLA-251

Toshiba Corporation
Toshiba Semiconductor
Part No. TIM5964-35SLA-251
OCR Text ...hermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) CONDITION VDS= 3V IDS= 10.5A VDS= 3V IDS= 140mA VDS= 3V VGS= 0V IGS= -420A Channel to Case UNIT MIN. mS V A V C/W -1.0 -5 TYP. MAX. 6500 -2.5 20 1.0 -4.0 26 1.3 The...
Description MICROWAVE POWER GaAs FET TIM5964-35SLA-251
From old datasheet system

File Size 36.69K  /  4 Page

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    TIM1314-30L09

Toshiba Semiconductor
Part No. TIM1314-30L09
OCR Text ...2.0 20.0 1.0 -4.5 1.1 gm VGSoff IDSS VGSO CONDITIONS VDS= 3V IDS= 9.6A VDS= 3V IDS= 290mA VDS= 3V VGS= 0V IGS= -290A Rth(c-c) Channel to Case The information contained herein is presented only as a guide for the applications...
Description HIGH POWER P1dB=45.0dBm at 13.75GHz to 14.5GHz

File Size 87.08K  /  2 Page

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For vgsoff-10v Found Datasheets File :: 89    Search Time::2.578ms    
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