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  vdss-150v Datasheet PDF File

For vdss-150v Found Datasheets File :: 550    Search Time::1.531ms    
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    IRF6216 IRF6216TR

IRF[International Rectifier]
Part No. IRF6216 IRF6216TR
OCR Text ... 0.240@VGS =-10V -2.2A l VDSS -150V Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) l Fully Characterized Avalanche...
Description -150V Single P-Channel HEXFET Power MOSFET in a SO-8 package
HEXFET? Power MOSFET
SMPS MOSFET

File Size 101.73K  /  8 Page

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    2SK1861

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SK1861
OCR Text ...erature Channel Temperature Tch VDSS Drain-Source Voltage VGSS Gate-Source Voltage Continuous Drain CurrentiDCj ID IDP Continuous Drain Curr...150V, VGS = 0V VGS = 20V, VDS = 0V ID = 2A, VDS = 10V ID = 2A, VGS = 4V ID = 2A, VGS = 10V ID = 1mA,...
Description 2SK1861
VR Series Power MOSFET

File Size 403.74K  /  10 Page

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    FDC2512

Fairchild Semiconductor
Part No. FDC2512
OCR Text ...solute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 150 20 (Note 1a) ...
Description 150V N-Channel PowerTrench MOSFET
150V N-Channel PowerTrench MOSFET
150V N-Channel PowerTrench MOSFET

File Size 173.44K  /  5 Page

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    RDX045N60

Rohm CO.,LTD.
ROHM[Rohm]
Part No. RDX045N60
OCR Text ...Pulsed Continuous Pulsed Symbol VDSS VGSS ID 1 IDP 2 IS ISP 2 IAS 3 EAS 4 PD Tch Tstg Limits 600 30 4.5 18 4.5 18 4.5 40 35 150 -55 to +150 ...150V ID= 2.25A VGS= 10V RL= 66.7 RG=10 VDD 300V, VGS= 10V ID= 4.5A RL= 66.7, RGS= 10 Yfs Ciss Cos...
Description 10V Drive Nch MOS FET

File Size 73.60K  /  3 Page

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    IRF3315L

International Rectifier
Part No. IRF3315L
OCR Text ...tching Fully Avalanche Rated VDSS = 150V G S RDS(on) = 0.082 ID = 21A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon are...
Description HEXFET Power MOSFET

File Size 201.56K  /  10 Page

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    IRF6215L IRF6215S

International Rectifier, Corp.
Part No. IRF6215L IRF6215S
OCR Text ... Rated Description l l D VDSS = -150V RDS(on) = 0.29 G ID = -13A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This b...
Description -150V Single P-Channel HEXFET Power MOSFET in a TO-262 package - 150伏单P沟道HEXFET功率MOSFET的采用TO - 262封装
HEXFET? Power MOSFET

File Size 179.06K  /  10 Page

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    ADPOW[Advanced Power Technology]
Part No. ARF461A ARF461B
OCR Text ...ass C) MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD RqJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage * Low Cost Common S...150V CAPACITANCE (pf) 10 5 0 30 P 45 E R Pout = 150W IM L A IN 5000 1000 500 ...
Description N-CHANNEL ENHANCEMENT MODE

File Size 87.89K  /  4 Page

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    IRFR24N15D IRFU24N15D

International Rectifier
Part No. IRFR24N15D IRFU24N15D
OCR Text ... HEXFET(R) Power MOSFET l VDSS 150V RDS(on) max 95m ID 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001...
Description 150V Single N-Channel HEXFET Power MOSFET in a D-Pak package
HEXFET? Power MOSFET

File Size 106.41K  /  10 Page

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    IRFS52N15D IRFB52N15D IRFSL52N15D IRFB52N15

Fairchild Semiconductor
IRF[International Rectifier]
Part No. IRFS52N15D IRFB52N15D IRFSL52N15D IRFB52N15
OCR Text ...h frequency DC-DC converters VDSS 150V RDS(on) max 0.032 ID 60A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001...
Description Power MOSFET(Vdss=150V/ Rds(on)max=0.032ohm/ Id=50A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A)

File Size 133.21K  /  11 Page

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    Fairchild
Part No. FDB2532FDP2532FDI2532
OCR Text ... unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, RJA = 43oC/W) Pulsed...
Description N-Channel PowerTrench® MOSFET

File Size 239.05K  /  11 Page

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