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For ufm Found Datasheets File :: 101 Search Time::6.468ms
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				Toshiba Semiconductor
Part No.	SSM3K121TU-14
OCR Text	....1 3 0.70.05 +0.1 0.3 0.1660.05 ufm start of commercial production 2006-11 ssm3k121tu 2014-03-01 2 switching time test circuit (a) test circuit (b) v in marking equivalent circuit (top view) notice on ...
Description	TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
File Size	160.93K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM3K122TU-14
OCR Text	... 1: gate 2: source 3: drain ufm start of commercial production 2007-10 ssm3k122tu 2014-03-01 2 switching time test circuit (a) test circuit (b) v in marking equivalent circuit (top view) ...
Description	TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
File Size	174.34K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM3K123TU-14
OCR Text	....1 3 0.70.05 +0.1 0.3 0.1660.05 ufm start of commercial production 2007-04 ssm3k123tu 2014-03-01 2 switching time test circuit (a) test circuit (b) v in marking equivalent circuit (top view) notice on ...
Description	TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
File Size	161.13K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM3J111TU
OCR Text	..., Cu Pad: 645 mm2 ) Note: ufm JEDEC JEITA TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristic Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold volt...
Description	Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications
File Size	470.43K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM3J110TU
OCR Text	...: 1: Gate 2: Source 3: Drain ufm JEDEC JEITA TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristic Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold volt...
Description	Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications
File Size	137.49K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM3J109TU
OCR Text	...mm x 1.6 t, Cu Pad: 645 mm ) ufm JEDEC JEITA TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristic Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold v...
Description	Field-Effect Transistor Silicon P-Channel MOS Type Power Management Switch Applications High-Speed Switching Applications
File Size	195.32K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM3J108TU
OCR Text	...: 1: Gate 2: Source 3: Drain ufm JEDEC JEITA TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristic Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold volt...
Description	Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications
File Size	137.55K / 5 Page	View it Online	Download Datasheet

				RECTRON[Rectron Semiconductor]
Part No.	ufm106 ufm101 ufm102 ufm103 ufm104 ufm105
OCR Text	...5 ~U 10 6 1.0 .1 ufm 101 ~UF TJ = 25J TJ = 25J .1 .01 Pulse Width = 300uS 1% Duty Cycle .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD...
Description	SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere)
File Size	21.59K / 2 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM3J130TU-14
OCR Text	....1 3 0.70.05 +0.1 0.3 0.1660.05 ufm jjc 1 2 3 1 2 3 start of commercial production 2009-01 ssm3j130tu 2014-03-01 2 electrical characteristics (ta = 25c) characteristic symbol test conditions min typ. max unit v (br) dss i d ...
Description	TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
File Size	197.87K / 6 Page	View it Online	Download Datasheet

For ufm Found Datasheets File :: 101 Search Time::6.468ms
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