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MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
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| Part No. |
CM1200HC-66H
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| OCR Text |
TYPE
. ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som
AR LIMIN
Y
MITSUBISHI H...nF nF nF C s s s s V s C K/W K/W K/W
Collector cutoff current Gate-emitter VGE(th) threshold volt... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
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| File Size |
52.44K /
4 Page |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM1200HC-50H
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| OCR Text |
...H POWER SWITCHING USE INSULATED TYPE
CM1200HC-50H
q IC................................................................ 1200A q VCES .....nF nF nF C s s s s V s C K/W K/W K/W
Collector cutoff current Gate-emitter VGE(th) threshold volt... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
57.06K /
4 Page |
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it Online |
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Stackpole Electronics, Inc.
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| Part No. |
KP1830-315-061
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| OCR Text |
type www.vishay.com for technical ques tions, contact: dc-film@vishay.com document number: 26016 212 revision: 16-jan-09 dimensions in mil...nf 100 pf 210 1.0 nf 1.0 nf 310 10 nf 10 nf multiplier (nf) 0.01 1 0.1 2 13 type construction voltag... |
| Description |
CAPACITOR, FILM/FOIL, POLYPROPYLENE, 63 V, 0.015 uF, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
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| File Size |
96.34K /
10 Page |
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it Online |
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Mitsubishi Electric, Corp.
POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM1200HB-66H
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| OCR Text |
...r Transistor) Modules INSULATED TYPE
CM1200HB-66H
q IC................................................................ 1200A q VCES .....nF nF nF C s s s s V s C K/W K/W K/W
Collector cutoff current Gate-emitter VGE(th) threshold volt... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE 1200 A, 3300 V, N-CHANNEL IGBT
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| File Size |
50.20K /
4 Page |
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it Online |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
CM100TF-28H
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| OCR Text |
TYPE
B D X QX QX Z - M5 THD (7 TYP.) S N
GuP EuP
GvP EvP
GwP EwP
P R L C
N
P P GuN EuN GvN EvN GwN EwN
J
U N V W
A...nF nF nF ns ns ns ns ns C
Diode Reverse Recovery Time Diode Reverse Recovery Charge
Thermal an... |
| Description |
122 x 32 pixel format, LED Backlight available
HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
52.34K /
4 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
CM100TF-24H CM100TF-24
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| OCR Text |
TYPE
B D X QX QX Z - M5 THD (7 TYP.) S N
GuP EuP
GvP EvP
GwP EwP
P R L C
N
P P GuN EuN GvN EvN GwN EwN
J
U N V W
A...nF nF nF ns ns ns ns ns C
Diode Reverse Recovery Time Diode Reverse Recovery Charge
Thermal an... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
SOCKET,PLCC,32 PIN
122 x 32 pixel format, LED Backlight available
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| File Size |
52.61K /
4 Page |
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it Online |
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Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
CM100DU-24H
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| OCR Text |
TYPE
TC Measured Point
E F G E2 A B H J D C
G2 G2
U C1
G1 E1
3-M5 Nuts O P O Q
CM
C2E1
K
2 - Mounting Holes (6.5 D...nF nF nF ns ns ns ns ns C
Diode Reverse Recovery Time** Diode Reverse Recovery Charge**
**Repr... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
44.26K /
4 Page |
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it Online |
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
CGY99
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| OCR Text |
...bserve handling precautions!
Type CGY 99
Marking t.b.d.
Ordering Code (taped) t.b.d.
Package P-TSSOP-10-2
Maximum Ratings Pos...nF 1 nF 1 nF 100 nF
C5 C6 C7 R1
- - -
12 pF 8.2 pF 1 nF 150 - - -
0603 0603 0603 0603
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| Description |
GaAs MMIC
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| File Size |
73.96K /
10 Page |
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it Online |
Download Datasheet |
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Price and Availability
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