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SamHop Microelectronics...
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| Part No. |
STUD441S
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| OCR Text |
...urrent-continuous a -pulsed b a sigle pulse avalanche energy d maximum power dissipation a operating junction and storage temperature range t j , t stg 50 c/w thermal resistance, junction-to-ambient r ja t c =25 c 3 c/w thermal resistance,... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
119.75K /
8 Page |
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it Online |
Download Datasheet
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TOSHIBA
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| Part No. |
TC58BVG2S0HTAI0
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| OCR Text |
...cell array to starting address (sigle page) ? 55 220 tr memory cell array to starting address (multi page) ? 90 420 s (1) refer to application note (12) toward the end of this document. data output when treh is long... |
| Description |
BENAND (Built-in ECC SLCNAND)
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| File Size |
353.71K /
51 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TC58BVG2S0HBAI4
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| OCR Text |
...cell array to starting address (sigle page) ? 55 220 tr memory cell array to starting address (multi page) ? 90 420 s (1) refer to application note (12) toward the end of this document. data output when treh is long... |
| Description |
BENAND (Built-in ECC SLCNAND)
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| File Size |
353.68K /
51 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TC58BVG2S0HBAI6
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| OCR Text |
...cell array to starting address (sigle page) ? 55 220 tr memory cell array to starting address (multi page) ? 90 420 s (1) refer to application note (12) toward the end of this document. data output when treh is long... |
| Description |
BENAND (Built-in ECC SLCNAND)
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| File Size |
393.15K /
51 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TC58BVG2S0HTA00
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| OCR Text |
...cell array to starting address (sigle page) ? 55 220 tr memory cell array to starting address (multi page) ? 90 420 s (1) refer to application note (12) toward the end of this document. data output when treh is long... |
| Description |
BENAND (Built-in ECC SLCNAND)
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| File Size |
353.60K /
51 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TC58BYG2S0HBAI4
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| OCR Text |
...cell array to starting address (sigle page) ? 55 220 tr memory cell array to starting address (multi page) ? 90 420 s (1) refer to application note (12) toward the end of this document. data output when treh is long... |
| Description |
BENAND (Built-in ECC SLCNAND)
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| File Size |
353.70K /
51 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TH58BVG3S0HBAI4
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| OCR Text |
...cell array to starting address (sigle page) ? 55 220 s memory cell array to starting address (multi page) ? 90 420 (1) refer to application note (12) toward the end of this document. data output when treh is long, out... |
| Description |
BENAND (Built-in ECC SLCNAND)
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| File Size |
392.46K /
52 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STU612D
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| OCR Text |
...urrent-continuous a -pulsed b a sigle pulse avalanche energy d maximum power dissipation a operating junction and storage temperature range t j , t stg www.samhop.com.tw mar,05,2009 1 details are subject to change without notice. 60 c/w the... |
| Description |
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
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| File Size |
272.86K /
11 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STU606S
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| OCR Text |
...se r jc t c =70 c a e as mj sigle pulse avalanche energy d t c =70 c w a 16.8 32 25 green product
symbol min typ max units bv dss 60 v 1 i gss 100 na v gs(th) 1.0 v 45 g fs 16 s c iss 825 pf c oss 72 pf c rss 48 pf q g 13 nc 12.5 38 ... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
141.11K /
8 Page |
View
it Online |
Download Datasheet |
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