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For performances Found Datasheets File :: 3239    Search Time::1.343ms    
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    TDA7360 TDA7360HS

STMicroelectronics
Part No. TDA7360 TDA7360HS
OCR Text ...nal count, excellent electrical performances, flexibility in use, superior reliability thanks to a built-in array of protections. As a result the following performances has been achieved: NO NEED OF BOOTSTRAP CAPACITORS EVEN AT THE HIGHEST ...
Description 22W BRIDGE / STEREO AUDIO AMPLIFIER WITH CLIPPING DETECTOR

File Size 215.57K  /  22 Page

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    TDA7350 TDA7350A

STMicroelectronics
Part No. TDA7350 TDA7350A
OCR Text ...nal count, excellent electrical performances, flexibility in use, superior reliability thanks to a built-in array of protections. As a result the following performances has been achieved: NO NEED OF BOOTSTRAP CAPACITORS EVEN AT THE HIGHEST ...
Description 22W BRIDGE-STEREO AMPLIFIER FOR CAR RADIO

File Size 308.95K  /  22 Page

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    MOTOROLA[Motorola, Inc]
Part No. MWIC930R1 MWIC930 MWIC930GR1
OCR Text ... 790 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N - CDMA and W - CDMA. Final Application * Typical Performance @ P1dB: VDD = 26 Volts, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 30...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 370.24K  /  16 Page

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    27271SL

Freescale Semiconductor, Inc
Part No. 27271SL
OCR Text ...n Typ Max Unit Typical GSM EDGE performances (In Freescale GSM EDGE Test Fixture Optimized for 920 - 960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, Pout = 16 W Avg., f = 920 - 960 MHz, GSM EDGE Signal Power Gain Drain Efficiency Error ...
Description RF Power Field Effect Transistor

File Size 567.28K  /  15 Page

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    NCP2823AFCT2G NCP2823 NCP2823BFCT2G

ON Semiconductor
Part No. NCP2823AFCT2G NCP2823 NCP2823BFCT2G
OCR Text ...ons Min Typ Max Unit GENERAL performances VP FOSC IDD Operational Power Supply Oscillator Frequency Supply current NCP2823A VP = 3.6 V, No Load NCP2823B VP = 3.6 V, No Load VENL = VENR = 0 V EN rising edge EN falling edge VENL = 0 V 2.5 ...
Description High Efficiency 3W Filterless Class D Audio Amplifier

File Size 155.35K  /  11 Page

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    飞思卡尔半导体(中国)有限公司
Part No. MRF6S20010GNR1
OCR Text ...it typical 2 - carrier w - cdma performances (in freescale cdma test fixture, 50 ohm system) v dd = 28 vdc, i dq = 130 ma, p out = 1 w avg., f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz, 2 - carrier w - cdma,...
Description RF Power Field Effect Transistors 射频功率场效应晶体管

File Size 584.19K  /  24 Page

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    SD293210

STMicroelectronics
Part No. SD293210
OCR Text .... . . . . . . . . . . 5 Typical performances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4.1 Typical performance (175 MHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 6 7 8...
Description RF power transistors HF/VHF/UHF N-channel MOSFETs

File Size 675.88K  /  22 Page

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    MW6IC2015GNBR1 MW6IC2015NBR108

Freescale Semiconductor, Inc
Freescale Semiconductor, In...
Part No. MW6IC2015GNBR1 MW6IC2015NBR108
OCR Text ...1805 to 1990 MHz. The linearity performances 1805 - 1990 MHz, 15 W, 26 V cover all modulation formats for cellular applications: GSM, GSM EDGE, PHS, GSM/GSM EDGE, CDMA TDMA, CDMA, W - CDMA and TD - SCDMA. RF LDMOS WIDEBAND Final Application...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 1,117.72K  /  28 Page

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For performances Found Datasheets File :: 3239    Search Time::1.343ms    
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